Sound detecting mechanism
    1.
    发明授权
    Sound detecting mechanism 失效
    声音检测机构

    公开(公告)号:US07386136B2

    公开(公告)日:2008-06-10

    申请号:US10544253

    申请日:2004-05-25

    IPC分类号: H04R25/00

    摘要: A sound detecting mechanism is provided which forms a diaphragm with a required thickness by thickness control and yet restrains distortion of the diaphragm to provide high sensitivity.The sound detecting mechanism comprises a pair of electrodes forming a capacitor on a substrate A in which one of the electrodes is a back electrode C forming perforations Ca therein corresponding to acoustic holes and the other of the electrodes is a diaphragm B. The diaphragm B is mounted on the substrate A while the back electrode C is mounted in a position opposed to the diaphragm B across a void F to be supported by the substrate A, the back electrode C being formed by polycrystal silicon of 5 μm to 20 μm in thickness.

    摘要翻译: 提供一种声音检测机构,其通过厚度控制形成所需厚度的膜片,并且抑制隔膜的变形以提供高灵敏度。 声音检测机构包括在基板A上形成电容器的一对电极,其中一个电极是形成其中对应于声孔的穿孔Ca的背面电极C,另一个电极是隔膜B.隔膜B是 安装在基板A上,而背面电极C通过空隙F安装在与隔膜B相对的位置上以由基板A支撑,背面电极C由5μm至20μm的多晶硅形成。

    Sound detecting mechanism
    2.
    发明申请
    Sound detecting mechanism 失效
    声音检测机构

    公开(公告)号:US20060233400A1

    公开(公告)日:2006-10-19

    申请号:US10565059

    申请日:2004-07-14

    IPC分类号: H04R25/00

    CPC分类号: H04R19/016 H04R19/04

    摘要: A sound detecting mechanism capable of forming a diaphragm and a back electrode on a substrate by a simple process includes acoustic holes corresponding to perforations formed on a front surface of a substrate. A second protective film, a sacrificial layer and a metal film are laminated on the front surface in a portion corresponding to the acoustic holes. The substrate is etched from the back surface thereof to a depth reaching the acoustic holes to form an acoustic opening. Subsequently, by effecting an etching from the back surface of the substrate through the acoustic holes, the sacrificial layer is removed and a void area is formed between the diaphragm made of the metal film, the substrate and the formed perforations. The sacrificial layer that remains after the etching is used as a spacer for maintaining a gap between the back electrodes and the diaphragm.

    摘要翻译: 能够通过简单的工艺在基板上形成隔膜和背面电极的声音检测机构包括对应于形成在基板前表面上的穿孔的声孔。 第二保护膜,牺牲层和金属膜层叠在与声孔对应的部分的前表面上。 衬底从其后表面被蚀刻到到达声孔的深度以形成声学开口。 随后,通过通过声孔从衬底的背面进行蚀刻,除去牺牲层,并且在由金属膜,衬底和形成的穿孔构成的隔膜之间形成空隙区域。 蚀刻后残留的牺牲层用作用于保持背电极和隔膜之间的间隙的间隔物。

    Sound detecting mechanism
    3.
    发明申请
    Sound detecting mechanism 失效
    声音检测机构

    公开(公告)号:US20060145570A1

    公开(公告)日:2006-07-06

    申请号:US10544253

    申请日:2004-05-25

    IPC分类号: H01L41/08

    摘要: A sound detecting mechanism is provided which forms a diaphragm with a required thickness by thickness control and yet restrains distortion of the diaphragm to provide high sensitivity. The sound detecting mechanism comprises a pair of electrodes forming a capacitor on a substrate A in which one of the electrodes is a back electrode C forming perforations Ca therein corresponding to acoustic holes and the other of the electrodes is a diaphragm B. The diaphragm B is mounted on the substrate A while the back electrode C is mounted in a position opposed to the diaphragm B across a void F to be supported by the substrate A, the back electrode C being formed by polycrystal silicon of 5 μm to 20 μm in thickness.

    摘要翻译: 提供一种声音检测机构,其通过厚度控制形成所需厚度的膜片,并且抑制隔膜的变形以提供高灵敏度。 声音检测机构包括在基板A上形成电容器的一对电极,其中一个电极是形成其中对应于声孔的穿孔Ca的背面电极C,另一个电极是隔膜B.隔膜B是 安装在基板A上,而背面电极C通过空隙F安装在与隔膜B相对的位置上以由基板A支撑,背面电极C由5μm至20μm的多晶硅形成。

    Sound detecting mechanism
    5.
    发明授权
    Sound detecting mechanism 失效
    声音检测机构

    公开(公告)号:US07570773B2

    公开(公告)日:2009-08-04

    申请号:US10565059

    申请日:2004-07-14

    IPC分类号: H04R25/00

    CPC分类号: H04R19/016 H04R19/04

    摘要: A sound detecting mechanism capable of forming a diaphragm and a back electrode on a substrate by a simple process includes acoustic holes corresponding to perforations formed on a front surface of a substrate. A second protective film, a sacrificial layer and a metal film are laminated on the front surface in a portion corresponding to the acoustic holes. The substrate is etched from the back surface thereof to a depth reaching the acoustic holes to form an acoustic opening. Subsequently, by effecting an etching from the back surface of the substrate through the acoustic holes, the sacrificial layer is removed and a void area is formed between the diaphragm made of the metal film, the substrate and the formed perforations. The sacrificial layer that remains after the etching is used as a spacer for maintaining a gap between the back electrode and the diaphragm.

    摘要翻译: 能够通过简单的工艺在基板上形成隔膜和背面电极的声音检测机构包括对应于形成在基板前表面上的穿孔的声孔。 第二保护膜,牺牲层和金属膜层叠在与声孔对应的部分的前表面上。 衬底从其后表面被蚀刻到到达声孔的深度以形成声学开口。 随后,通过通过声孔从衬底的背面进行蚀刻,除去牺牲层,并且在由金属膜,衬底和形成的穿孔构成的隔膜之间形成空隙区域。 蚀刻后残留的牺牲层用作用于保持背电极和隔膜之间的间隙的间隔物。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US06566728B1

    公开(公告)日:2003-05-20

    申请号:US09678555

    申请日:2000-10-04

    IPC分类号: H01L2900

    CPC分类号: H04R19/005 H04R19/04

    摘要: First, a stationary electrode layer is formed over a semiconductor substrate and an integrated network is composed in a circuit element area around the stationary electrode layer by electrode wiring forming each circuit element. A spacer is arranged on a passivation film in plural places. A dummy island is formed in an area between the circuit element area and the stationary electrode layer area. Supply potential Vcc is applied to the dummy island and ground potential GND is applied to a P+-type separated area.

    摘要翻译: 首先,在半导体衬底上形成固定电极层,并且通过形成每个电路元件的电极布线,在固定电极层周围的电路元件区域中形成集成网络。 在多个位置上在隔离膜上设置间隔物。 在电路元件区域和固定电极层区域之间的区域中形成虚设的岛。 将供电电位Vcc施加到虚拟岛,将接地电位GND施加到P +型分离区域。