发明申请
US20060055393A1 Method for monitoring lateral encroachment of spacer process on a CD SEM
失效
在CD扫描电子显微镜上监测间隔物过程横向侵入的方法
- 专利标题: Method for monitoring lateral encroachment of spacer process on a CD SEM
- 专利标题(中): 在CD扫描电子显微镜上监测间隔物过程横向侵入的方法
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申请号: US10942303申请日: 2004-09-16
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公开(公告)号: US20060055393A1公开(公告)日: 2006-03-16
- 发明人: Bachir Dirahoui , Renee Mo , Ravikumar Ramachandran , Eric Solecky
- 申请人: Bachir Dirahoui , Renee Mo , Ravikumar Ramachandran , Eric Solecky
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: G01R19/00
- IPC分类号: G01R19/00
摘要:
A process implementing steps for determining encroachment of a spacer structure in a semiconductor device having thick and thin spacer regions, including a transition region formed therebetween. The method steps comprise: obtaining a line width roughness (LWR) measurement at at least one location along each thick, thin and transition spacer regions; determining a threshold LWR measurement value based on the LWR measurements; defining a region of interest (ROI) and obtaining a further LWR measurement in the ROI; comparing the LWR measurement in the ROI against the threshold LWR measurement value; and, notifying a user that either encroachment of the spacer structure is present when the LWR measurement in the ROI is below the threshold LWR measurement value, or that no encroachment of the spacer structure is present when the LWR measurement in the ROI is above the threshold LWR measurement value.