发明申请
- 专利标题： Semiconductor device fabrication method and apparatus
- 专利标题（中）： 半导体器件制造方法和装置
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申请号： US10986408申请日： 2004-11-12
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公开(公告)号： US20060057746A1公开(公告)日： 2006-03-16
- 发明人: Seiji Inumiya , Motoyuki Sato , Akio Kaneko , Katsuyuki Sekine , Kazuhiro Eguchi
- 申请人： Seiji Inumiya , Motoyuki Sato , Akio Kaneko , Katsuyuki Sekine , Kazuhiro Eguchi
- 优先权： JP2004-264149 20040910
- 主分类号： H01L21/66
- IPC分类号： H01L21/66
摘要：
According to the present invention, there is provided a semiconductor device fabrication method, comprising: depositing a film made of an insulating material on a surface of a semiconductor substrate; measuring a film thickness and/or composition of the film; setting nitriding conditions or oxidation conditions on the basis of the measurement result; and nitriding or oxidizing the film on the basis of the set nitriding conditions or oxidation conditions.
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