- 专利标题: Method and apparatus for forming metal film
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申请号: US11219777申请日: 2005-09-07
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公开(公告)号: US20060057839A1公开(公告)日: 2006-03-16
- 发明人: Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari
- 申请人: Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari
- 优先权: JP2004-260527 20040908
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763 ; H01L21/20
摘要:
A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The metal film-forming method including: providing a substrate having embedded interconnects formed in interconnect recesses provided in a surface of the substrate; and forming a metal film, having different film qualities in the thickness direction, on surfaces of the interconnects in a continuous manner by changing the flow state of a processing solution relative to the surface of the substrate while keeping the surface of the substrate in contact with the processing solution.
公开/授权文献
- US07498261B2 Method and apparatus for forming metal film 公开/授权日:2009-03-03