公开(公告)号：US20100105154A1

公开(公告)日：2010-04-29

申请号：US12685820

申请日：2010-01-12

Applicant: XINMING WANG ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka

Inventor： XINMING WANG ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari ,  Yukiko Nishioka

IPC: H01L21/66 ,  H01L21/46

CPC classification number: H01L21/02068 ,  C23C18/1632 ,  C23C18/1689 ,  C23C18/1844 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/67028 ,  H01L21/76849 ,  H01L21/76874 ,  H01L21/76883

Abstract: A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.

Abstract translation: 基板处理方法可以通过在贱金属（例如互连）的暴露表面上通过无电解电镀牢固地形成金属膜，具有增加的生产量并且在母材中不形成空隙。 基板处理方法包括：用包含含羧基的有机酸或其盐和表面活性剂的水溶液作为添加剂的清洗溶液清洗在表面形成的基体金属的基材的表面; 使清洗后的基板的表面与包含清洗液和含有催化剂金属离子的溶液的混合物的处理溶液接触，从而将催化剂施加到基板的表面; 以及通过在基板的催化剂涂覆表面上通过无电镀形成金属膜。

公开(公告)号：US20090107851A1

公开(公告)日：2009-04-30

申请号：US12285615

申请日：2008-10-09

Applicant: Akira Kodera ,  Xinming Wang ,  Itsuki Kobata ,  Yasushi Toma

Inventor： Akira Kodera ,  Xinming Wang ,  Itsuki Kobata ,  Yasushi Toma

IPC: H01L21/3063 ,  H01L21/67

CPC classification number: H01L21/32125 ,  B23H5/08 ,  C25F3/30

Abstract: An electrolytic polishing method of a substrate having a barrier film and an interconnect metal layer on a surface to be processed under the presence of an electrolytic solution, including a barrier film electrolytic polishing process which removes the barrier film by applying a voltage between a cathode and an anode, with the surface to be processed serving as the cathode, and causing relative motion between the surface to be processed and a polishing pad which faces and makes contact with the surface to be processed.

Abstract translation: 一种在电解液存在下在待加工表面上具有阻挡膜和互连金属层的基板的电解抛光方法，该方法包括：通过在阴极与阴极之间施加电压来除去阻挡膜的阻挡膜电解抛光工艺; 阳极，待处理的表面用作阴极，并且引起待处理表面与抛光垫之间的相对运动，所述抛光垫面向并与待处理表面接触。

公开(公告)号：US07498261B2

公开(公告)日：2009-03-03

申请号：US11219777

申请日：2005-09-07

Applicant: Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari

Inventor： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Yukio Fukunaga ,  Akira Fukunaga ,  Akira Owatari

IPC: H01L21/44

CPC classification number: H01L21/288 ,  C23C18/1619 ,  C23C18/1669 ,  C23C18/32 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76874

Abstract: A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The metal film-forming method including: providing a substrate having embedded interconnects formed in interconnect recesses provided in a surface of the substrate; and forming a metal film, having different film qualities in the thickness direction, on surfaces of the interconnects in a continuous manner by changing the flow state of a processing solution relative to the surface of the substrate while keeping the surface of the substrate in contact with the processing solution.

Abstract translation: 本发明的金属成膜方法可以使用单一的处理液以连续的方式形成厚度方向的膜质量不同的金属膜。 所述金属成膜方法包括：提供具有形成在所述基板的表面中的互连凹槽中的嵌入式互连的基板; 并且通过在保持基板的表面与基板的表面接触的同时改变处理液相对于基板的表面的流动状态，以连续的方式在相互连接的表面上形成在厚度方向上具有不同膜质量的金属膜 处理方案。

公开(公告)号：US07407821B2

公开(公告)日：2008-08-05

申请号：US10874245

申请日：2004-06-24

Applicant: Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Akira Fukunaga

Inventor： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Akira Fukunaga

IPC: H01L21/66

CPC classification number: H01L21/76849 ,  C23C18/1608 ,  C23C18/1675 ,  C23C18/1692 ,  C23C18/1879 ,  H01L21/288 ,  H01L21/76864 ,  H01L21/76874 ,  H01L22/12 ,  H01L22/20 ,  H01L2223/54466

Abstract: There is provided a substrate processing method and apparatus which can measure and monitor thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate having a metal and an insulating material exposed on its surface in such a manner that a film thickness of the metal, with an exposed surface of the metal as a reference plane, is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal during and/or immediately after processing, and monitoring processing and adjusting processing conditions based on results of this measurement.

Abstract translation: 提供了可以根据需要测量和监测在基板上形成的膜的厚度和/或性能的基板处理方法和装置，并且可以快速地校正工艺条件的偏差，因此可以稳定地提供恒定品质的产品。 一种基板处理方法，用于处理具有金属和绝缘材料的基板，所述基板以其金属的暴露表面作为基准面的方式选择性地或优先地改变的金属的膜厚度包括 测量处理期间和/或紧随其后的金属的膜厚度和/或膜性质的变化，以及基于该测量结果的监测处理和调整处理条件。

公开(公告)号：US07344986B2

公开(公告)日：2008-03-18

申请号：US10482104

申请日：2002-11-06

Applicant: Hiroaki Inoue ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

Inventor： Hiroaki Inoue ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

IPC: H01L21/4763

CPC classification number: H01L21/76849 ,  C23C18/48 ,  C25D3/58 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/7684 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a plating solution useful for forming embedded interconnects by embedding a conductive material in fine recesses for interconnects provided in the surface of a substrate, such as a semiconductor substrate, or for forming a protective layer for protecting the surface of embedded interconnects, a semiconductor device manufactured by using the plating solution and a method for manufacturing the semiconductor device. The plating solution contains copper ions, metal ions of a metal, and the metal is capable of forming with copper a copper alloy in which the metal does not form a solid solution with copper, a complexing agent, and a reducing agent free from alkali metal.

Abstract translation: 本发明涉及一种用于通过将导电材料嵌入到设置在诸如半导体衬底的衬底的表面中的互连的精细凹槽中的用于形成嵌入式互连的电镀液，或用于形成用于保护嵌入式互连的表面的保护层 ，使用电镀液制造的半导体装置及其制造方法。 电镀溶液含有铜离子，金属的金属离子，金属能够与铜形成铜合金，其中金属不与铜形成固溶体，络合剂和不含碱金属的还原剂 。

公开(公告)号：US07279408B2

公开(公告)日：2007-10-09

申请号：US11254790

申请日：2005-10-21

Applicant: Hiroaki Inoue ,  Norio Kimura ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

Inventor： Hiroaki Inoue ,  Norio Kimura ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

IPC: H01L21/44

CPC classification number: H01L21/76843 ,  C23C18/1608 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/32 ,  C23C18/48 ,  C23C18/50 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device has an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses formed in a surface of a semiconductor substrate, and also has a protective film formed on surfaces of exposed interconnects that define the interconnect structure, to protect the interconnects. The protective film has a flattened surface.

Abstract translation: 半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。 半导体器件具有嵌入式互连结构，其中诸如铜或银的电导体嵌入形成在半导体衬底的表面中的细小凹槽中，并且还具有形成在暴露的互连件的表面上的保护膜，所述互连限定了互连 结构，保护互连。 保护膜具有平坦的表面。

公开(公告)号：US07172979B2

公开(公告)日：2007-02-06

申请号：US10481424

申请日：2002-12-26

Applicant: Akihisa Hongo ,  Xinming Wang

Inventor： Akihisa Hongo ,  Xinming Wang

IPC: H01L21/469 ,  B08B3/00 ,  B05C11/00

CPC classification number: H01L21/76843 ,  B08B3/02 ,  B08B2203/0288 ,  H01L21/288 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/76849 ,  H01L21/76873

Abstract: A substrate processing apparatus has a substrate holder for detachably holding a substrate so that a surface, to be processed, of the substrate faces downward, and a sealing ring for sealing a peripheral portion of the surface, to be processed, of the substrate held by the substrate holder. The substrate processing apparatus also has a plurality of ejection nozzles disposed below the substrate holder for ejecting a treatment solution toward the surface, to be processed, of the substrate held by the substrate holder, and a mechanism for rotating and vertically moving the substrate holder and the ejection nozzles relative to each other.

Abstract translation: 基板处理装置具有：基板保持件，用于可拆卸地保持基板，使得待处理的基板的表面朝下;密封环，用于密封待加工的表面的周边部分 基板支架。 基板处理装置还具有多个喷射喷嘴，其设置在基板保持器的下方，用于向被基板保持器保持的基板的待处理表面喷射处理溶液，以及用于使基板保持器旋转和垂直移动的机构， 喷嘴相对于彼此。

公开(公告)号：US07141274B2

公开(公告)日：2006-11-28

申请号：US10482117

申请日：2002-11-06

Applicant: Xinming Wang ,  Kenichi Abe ,  Koji Mishima

Inventor： Xinming Wang ,  Kenichi Abe ,  Koji Mishima

IPC: B05D1/18

CPC classification number: H01L21/76843 ,  C23C18/1628 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76874

Abstract: A substrate processing apparatus and method which employs the so-called batch processing method of processing a plurality of substrates simultaneously, thereby increasing the throughput, and which can carry out processing, such as electroless plating, stably and securely with a relatively simple apparatus. The substrate processing apparatus includes: a processing bath (14) for holding a processing liquid (12); and a substrate holder (16) which is vertically movable relative to the processing bath (14) and which includes a plurality of substrate holding portions (40) for holding a plurality of substrates (W) in parallel. Each substrate holding portion (40) has a substrate stage (48) and a substrate presser (54), which can move close to or away from each other and can grip therebetween a peripheral portion of a substrate to thereby hold the substrate with its back surface sealed, and has a heating medium flow passage (62) for passing a heating medium therethrough so as to regulate the temperature of the substrate holding portion (40).

Abstract translation: 采用所谓的批处理方法同时处理多个基板的基板处理装置和方法，从而提高生产量，并且可以用相对简单的装置稳定可靠地进行化学镀等处理。 基板处理装置包括：用于保持处理液体的处理槽（14）; 以及相对于处理槽（14）可垂直移动并且包括用于平行地保持多个基板（W）的多个基板保持部（40）的基板保持件（16）。 每个基板保持部分（40）具有基板台（48）和基板压紧件（54），它们能够彼此接近或远离地移动，并且能够夹持在基板的周边部分之间，从而将基板保持在其背面 表面密封，并且具有用于使加热介质通过其中的加热介质流动通道（62），以调节基板保持部分（40）的温度。

公开(公告)号：US20050009213A1

公开(公告)日：2005-01-13

申请号：US10874245

申请日：2004-06-24

Applicant: Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Akira Fukunaga

Inventor： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Akira Fukunaga

IPC: G01B21/08 ,  C23C18/16 ,  C23C18/31 ,  C23F1/08 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/66 ,  H01L21/768 ,  H01L21/00

CPC classification number: H01L21/76849 ,  C23C18/1608 ,  C23C18/1675 ,  C23C18/1692 ,  C23C18/1879 ,  H01L21/288 ,  H01L21/76864 ,  H01L21/76874 ,  H01L22/12 ,  H01L22/20 ,  H01L2223/54466

Abstract: There is provided a substrate processing method and apparatus which can measure and monitor the thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in the process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate with a metal and an insulating material exposed on its surface in such a manner that the film thickness of the metal portion with the exposed surface of the metal as a reference plane is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal portion during and/or immediately after processing, and monitoring the processing and adjusting the processing conditions based on the results of measurement.

Abstract translation: 提供了可以根据需要测量和监测在基板上形成的膜的厚度和/或性能的基板处理方法和装置，并且可以快速校正工艺条件的偏差，因此可以稳定地提供恒定的产品 质量。 一种基板处理方法，用于以金属的暴露表面作为基准面的金属部分的膜厚选择性地或优先地改变的方式处理具有金属和绝缘材料的基板，该金属和绝缘材料暴露在其表面上，包括测量 在处理期间和/或紧随其后的金属部分的膜厚度和/或膜特性的变化，并且基于测量结果监视处理和调整处理条件。

公开(公告)号：US20110209727A1

公开(公告)日：2011-09-01

申请号：US13037487

申请日：2011-03-01

Applicant: Xinming WANG ,  Fumitoshi OIKAWA ,  Haruko ONO ,  Teruaki HOMBO

Inventor： Xinming WANG ,  Fumitoshi OIKAWA ,  Haruko ONO ,  Teruaki HOMBO

IPC: B08B1/00

CPC classification number: H01L21/67046 ,  B08B1/04

Abstract: A substrate is cleaned by performing a scrubbing process on a surface to be cleaned of the rotating substrate with a roll-shaped cleaning member while holding an outer circumferential surface of the roll-shaped cleaning member in contact with the surface to be cleaned of the substrate across a predetermined contact width. During at least a part of the scrubbing process, the roll-shaped cleaning member is placed at an offset cleaning position where the central axis of the roll-shaped cleaning member is spaced from the central axis of the substrate by a distance which is 0.14 to 0.5 times the contact width. The surface to be cleaned of the substrate is scrubbed with more uniform cleaning intensity while taking into account the cleaning intensity at each position (area) along the radial direction of the surface to be cleaned of the substrate.

Abstract translation: 通过在保持辊状清洁部件的外周面与基板的待清洗表面接触的同时用辊状清洁部件在旋转基板的待清洁表面上进行擦洗处理来清洁基板 跨越预定的接触宽度。 在洗涤过程的至少一部分期间，辊状清洁部件被放置在偏移清洁位置，其中辊状清洁部件的中心轴线与基板的中心轴线间隔开0.14至 接触宽度的0.5倍。 要清洁基材的表面，在考虑到沿基材待清洁表面的径向的每个位置（区域）处的清洁强度时，以更均匀的清洁强度进行擦洗。