- 专利标题： Integrated BST microwave tunable devices using buffer layer transfer method
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申请号： US11230186申请日： 2005-09-19
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公开(公告)号： US20060060894A1公开(公告)日： 2006-03-23
- 发明人: Il-Doo Kim , Harry Tuller
- 申请人： Il-Doo Kim , Harry Tuller
- 主分类号： H01L29/80
- IPC分类号： H01L29/80
摘要：
A BST microwave device includes a single crystal oxide wafer. A silicon dioxide layer is formed on the single crystal oxide layer. A silicon substrate is bonded on the silicon dioxide layer. A BST layer is formed on the single crystal oxide layer.