- 专利标题: Method of adjusting CoFe free layer magnetostriction
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申请号: US11268076申请日: 2005-11-07
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公开(公告)号: US20060061919A1公开(公告)日: 2006-03-23
- 发明人: Min Li , Kunliang Zhang , Masashi Sano , Koichi Terunuma , Simon Liao , Kochan Ju
- 申请人: Min Li , Kunliang Zhang , Masashi Sano , Koichi Terunuma , Simon Liao , Kochan Ju
- 专利权人: HEADWAY TECHNOLOGIES, INC.
- 当前专利权人: HEADWAY TECHNOLOGIES, INC.
- 主分类号: G11B5/127
- IPC分类号: G11B5/127 ; G11B5/33
摘要:
It has been found that the insertion of a copper laminate within CoFe, or a CoFe/NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high −10−6 to −10−5. This problem has been overcome by giving the copper laminates an oxygen exposure treatment When this is done, the free layer is found to have a very low positive magnetostriction constant. Additionally, the value of the magnetostriction constant can be adjusted by varying the thickness of the free layer and/or the position and number of the oxygen treated copper laminates.
公开/授权文献
- US07477491B2 GMR device having an improved free layer 公开/授权日:2009-01-13
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