发明申请
- 专利标题： Reducing ambipolar conduction in carbon nanotube transistors
- 专利标题（中）： 降低碳纳米管晶体管中的双极传导
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申请号： US10938778申请日： 2004-09-10
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公开(公告)号： US20060063318A1公开(公告)日： 2006-03-23
- 发明人: Suman Datta , Jack Kavalieros , Mark Doczy , Matthew Metz , Marko Radosavljevic , Amlan Majumdar , Justin Brask , Robert Chau
- 申请人： Suman Datta , Jack Kavalieros , Mark Doczy , Matthew Metz , Marko Radosavljevic , Amlan Majumdar , Justin Brask , Robert Chau
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234
摘要：
Ambipolar conduction can be reduced in carbon nanotube transistors by forming a gate electrode of a metal. Metal sidewall spacers having different workfunctions than the gate electrode may be formed to bracket the metal gate electrode.
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