发明申请
- 专利标题: Sub-resolution gaps generated by controlled over-etching
- 专利标题(中): 通过控制过蚀刻产生的子分辨率间隙
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申请号: US10943624申请日: 2004-09-17
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公开(公告)号: US20060063369A1公开(公告)日: 2006-03-23
- 发明人: JengPing Lu , Jackson Ho , Chinwen Shih , Michael Chabinyc , William Wong
- 申请人: JengPing Lu , Jackson Ho , Chinwen Shih , Michael Chabinyc , William Wong
- 申请人地址: US CA Palo Alto
- 专利权人: Palo Alto Research Center Incorporated
- 当前专利权人: Palo Alto Research Center Incorporated
- 当前专利权人地址: US CA Palo Alto
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763 ; H01L21/302
摘要:
Controlled overetching is utilized to produce metal patterns having gaps that are smaller than the resolution limits of the feature patterning (e.g., photolithography) process utilized to produce the metal patterns. A first metal layer is formed and masked, and exposed regions are etched away. The etching process is allowed to continue in a controlled manner to produced a desired amount of over-etching (i.e., undercutting the mask) such that an edge of the first metal layer is offset from an edge of the mask by a predetermined gap distance. A second metal layer is then deposited such that an edge of the second metal layer is spaced from the first metal layer by the predetermined gap distance. The metal gap is used to define, for example, transistor channel lengths, thereby facilitating the production of transistors having channel lengths defined by etching process control that are smaller than the process resolution limits.
公开/授权文献
- US07129181B2 Sub-resolution gaps generated by controlled over-etching 公开/授权日:2006-10-31