发明申请
US20060065937A1 Short channel effect of MOS devices by retrograde well engineering using tilted dopant implantation into recessed source/drain regions
审中-公开
通过逆向井工程使用倾斜掺杂剂注入到凹陷源极/漏极区域中MOS器件的短沟道效应
- 专利标题： Short channel effect of MOS devices by retrograde well engineering using tilted dopant implantation into recessed source/drain regions
- 专利标题（中）： 通过逆向井工程使用倾斜掺杂剂注入到凹陷源极/漏极区域中MOS器件的短沟道效应
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申请号： US10954914申请日： 2004-09-30
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公开(公告)号： US20060065937A1公开(公告)日： 2006-03-30
- 发明人: Thomas Hoffmann , Sunit Tyagi , Giuseppe Curello , Berhard Sell , Christopher Auth
- 申请人： Thomas Hoffmann , Sunit Tyagi , Giuseppe Curello , Berhard Sell , Christopher Auth
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L21/336
摘要：
A method of providing a halo implant region in a substrate of a MOS device having a gate electrode thereon and defining source/drain regions, a MOS device fabricated according to the above method, and a system comprising the MOS device. The method comprises: defining undercut recesses in the substrate at the source/drain regions thereof, the undercut recesses extending beneath the gate electrode; creating a halo implant region beneath the gate electrode between the recesses; and providing raised source/drain structures in the undercut recesses after creating the halo implant region.
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