发明申请
- 专利标题： Multi-doped semiconductor e-fuse
- 专利标题（中）： 多掺杂半导体电子熔丝
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申请号： US10954926申请日： 2004-09-30
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公开(公告)号： US20060065946A1公开(公告)日： 2006-03-30
- 发明人: Freidoon Mehrad , Richard Rouse , Robert Churchill
- 申请人： Freidoon Mehrad , Richard Rouse , Robert Churchill
- 专利权人： Texas Instruments, Inc.
- 当前专利权人： Texas Instruments, Inc.
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
The present invention provides a multi-doped semiconductor e-fuse for use in an integrated circuit and a method of manufacture therefore. In one aspect, the semiconductor e-fuse 200 includes a semiconductor body 205 having a neck region 220 interposed a first portion 210 of the semiconductor body 205 and a second portion 215 of the semiconductor body 205. The semiconductor body 205 is doped with opposite type dopants, and a conductive layer 230 is located over and extends across the neck region 220 to electrically connect the first portion 210 with the second portion 215.
公开/授权文献
- US1863941A Pneumatic pump 公开/授权日：1932-06-21
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