发明申请
US20060073682A1 LOW-K DIELECTRIC MATERIAL BASED UPON CARBON NANOTUBES AND METHODS OF FORMING SUCH LOW-K DIELECTRIC MATERIALS 有权
基于碳纳米管的低K电介质材料和形成这种低K电介质材料的方法

LOW-K DIELECTRIC MATERIAL BASED UPON CARBON NANOTUBES AND METHODS OF FORMING SUCH LOW-K DIELECTRIC MATERIALS
摘要:
A low-k dielectric material for use in the manufacture of semiconductor devices, semiconductor structures using the low-k dielectric material, and methods of forming such dielectric materials and fabricating such structures. The low-k dielectric material comprises carbon nanostructures, like carbon nanotubes or carbon buckyballs, that are characterized by an insulating electronic state. The carbon nanostructures may be converted to the insulating electronic state either before or after a layer containing the carbon nanostructures is formed on a substrate. One approach for converting the carbon nanostructures to the insulating electronic state is fluorination.
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