发明申请
US20060073682A1 LOW-K DIELECTRIC MATERIAL BASED UPON CARBON NANOTUBES AND METHODS OF FORMING SUCH LOW-K DIELECTRIC MATERIALS
有权
基于碳纳米管的低K电介质材料和形成这种低K电介质材料的方法
- 专利标题: LOW-K DIELECTRIC MATERIAL BASED UPON CARBON NANOTUBES AND METHODS OF FORMING SUCH LOW-K DIELECTRIC MATERIALS
- 专利标题(中): 基于碳纳米管的低K电介质材料和形成这种低K电介质材料的方法
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申请号: US10711764申请日: 2004-10-04
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公开(公告)号: US20060073682A1公开(公告)日: 2006-04-06
- 发明人: Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger
- 申请人: Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/28
- IPC分类号: H01L21/28
摘要:
A low-k dielectric material for use in the manufacture of semiconductor devices, semiconductor structures using the low-k dielectric material, and methods of forming such dielectric materials and fabricating such structures. The low-k dielectric material comprises carbon nanostructures, like carbon nanotubes or carbon buckyballs, that are characterized by an insulating electronic state. The carbon nanostructures may be converted to the insulating electronic state either before or after a layer containing the carbon nanostructures is formed on a substrate. One approach for converting the carbon nanostructures to the insulating electronic state is fluorination.
公开/授权文献
- US07233071B2 Low-k dielectric layer based upon carbon nanostructures 公开/授权日:2007-06-19
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