发明申请
- 专利标题： Semiconductor resistor and method for manufacturing the same
- 专利标题（中）： 半导体电阻及其制造方法
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申请号： US11234172申请日： 2005-09-26
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公开(公告)号： US20060076585A1公开(公告)日： 2006-04-13
- 发明人: Yoshiaki Kato , Yoshiharu Anda , Akiyoshi Tamura
- 申请人： Yoshiaki Kato , Yoshiharu Anda , Akiyoshi Tamura
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial, Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial, Co., Ltd.
- 当前专利权人地址： JP Osaka
- 优先权： JP2004-280227 20040927
- 主分类号： H01L31/112
- IPC分类号： H01L31/112
摘要：
An object of the present invention is to provide a semiconductor resistor that allows improvement in saturation voltage characteristics and a method for manufacturing the same. The semiconductor resistor of the present invention is formed on the substrate on which a GaAs FET is formed. The GaAs FET includes: a channel layer; a Schottky layer formed on the channel layer and made of undoped InGaP; and a contact layer formed on the Schottky layer. The semiconductor resistor includes: a contact layer including a part of the contact layer isolated from the GaAs FET; an active region including a part of the Schottky layer and a part of the channel layer, both of which are isolated from the GaAs FET; and two ohmic electrodes formed on the contact layer, and the Schottky layer isolated from the GaAs FET is exposed in an area between the two ohmic electrodes.
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