发明申请
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11237772申请日： 2005-09-29
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公开(公告)号： US20060076642A1公开(公告)日： 2006-04-13
- 发明人: Yasuhiro Ido , Takeshi Iwamoto
- 申请人： Yasuhiro Ido , Takeshi Iwamoto
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-285816 20040930
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
The present invention provides a semiconductor device comprising: a substrate; a first insulating film formed on a principal surface of the substrate; a second insulating film formed on the first insulating film; a plurality of fuses formed on the second insulating film; and a blocking layer disposed in the first and second insulating films, the blocking layer being formed of a material capable of reflecting laser light irradiated to blow the plurality of fuses. The blocking layer overlaps a region in which the plurality of fuses are formed when viewed from the principal surface of the substrate. The plurality of fuses may be each formed in two or more insulating film layers laminated to one another on the second insulating film.