发明申请
- 专利标题： Semiconductor fabricating apparatus with function of determining etching processing state
- 专利标题（中）： 具有确定蚀刻处理状态功能的半导体制造装置
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申请号： US11289394申请日： 2005-11-30
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公开(公告)号： US20060077397A1公开(公告)日： 2006-04-13
- 发明人: Tatehito Usui , Motohiko Yoshigai , Kazuhiro Jyouo , Tetsuo Ono
- 申请人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Jyouo , Tetsuo Ono
- 主分类号： G01B11/02
- IPC分类号： G01B11/02
摘要：
A semiconductor fabricating apparatus for etching a semiconductor wafer, which is placed in a chamber and which has a multiple-layer film composed of a first film formed on a surface thereof and a second film formed on the first film, using plasma generated in the chamber. The semiconductor fabricating apparatus includes a light detector that detects a change in an amount of light with a plurality of wavelengths obtained from the surface of the wafer for a predetermined time during which the second film is etched, and a detection unit that detects a thickness of the first film based on a specific waveform obtained from an output of the detector.
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