发明申请
- 专利标题： Near-field exposure photoresist and fine pattern forming method using the same
-
申请号： US11289595申请日： 2005-11-30
-
公开(公告)号： US20060078818A1公开(公告)日： 2006-04-13
- 发明人: Takako Yamaguchi , Ryo Kuroda
- 申请人： Takako Yamaguchi , Ryo Kuroda
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 优先权： JP2003-298973 20030822
- 主分类号： G03C5/18
- IPC分类号： G03C5/18
摘要：
A near-field photoresist for formation of a fine pattern with by near-field exposure includes an alkali-soluble novalac resin, a diazyde-type photosensitizer which is photoreactive by near-field exposure, a photoacid generator which generates acid by the near-field exposure, and a solvent.