发明申请
- 专利标题： High density plasma grown silicon nitride
- 专利标题（中）： 高密度等离子体生长氮化硅
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申请号： US11218111申请日： 2005-09-01
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公开(公告)号： US20060079100A1公开(公告)日： 2006-04-13
- 发明人: Pooran Joshi , Apostolos Voutsas , John Hartzell
- 申请人： Pooran Joshi , Apostolos Voutsas , John Hartzell
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L21/469
- IPC分类号： H01L21/469
摘要：
A method is provided for forming a silicon nitride (SiNx) film. The method comprises: providing a Si substrate or Si film layer; optionally maintaining a substrate temperature of about 400 degrees C., or less; performing a high-density (HD) nitrogen plasma process where a top electrode is connected to an inductively coupled HD plasma source; and, forming a grown layer of SiNx overlying the substrate. More specifically, the HD nitrogen plasma process includes using an inductively coupled plasma (ICP) source to supply power to a top electrode, independent of the power and frequency of the power that is supplied to the bottom electrode, in an atmosphere with a nitrogen source gas. The SiNx layer can be grown at an initial growth rate of at least about 20 Å in about the first minute.
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