发明申请
US20060084212A1 Planar substrate devices integrated with finfets and method of manufacture
有权
与finfets和制造方法集成的平面基板设备
- 专利标题: Planar substrate devices integrated with finfets and method of manufacture
- 专利标题(中): 与finfets和制造方法集成的平面基板设备
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申请号: US11200271申请日: 2005-08-09
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公开(公告)号: US20060084212A1公开(公告)日: 2006-04-20
- 发明人: Brent Anderson , Edward Nowak , Jed Rankin
- 申请人: Brent Anderson , Edward Nowak , Jed Rankin
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234
摘要:
A planar substrate device integrated with fin field effect transistors (FinFETs) and a method of manufacture comprises a silicon-on-insulator (SOI) wafer comprising a substrate; a buried insulator layer over the substrate; and a semiconductor layer over the buried insulator layer. The structure further comprises a FinFET over the buried insulator layer and a field effect transistor (FET) integrated in the substrate, wherein the FET gate is planar to the FinFET gate. The structure further comprises retrograde well regions configured in the substrate. In one embodiment, the structure further comprises a shallow trench isolation region configured in the substrate.