发明申请
- 专利标题： Hetero-integrated strained silicon n-and p-MOSFETs
- 专利标题（中）： 异质集成应变硅n型和p型MOSFET
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申请号： US10978715申请日： 2004-11-01
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公开(公告)号： US20060091377A1公开(公告)日： 2006-05-04
- 发明人: Diane Boyd , Juan Cai , Kevin Chan , Patricia Mooney , Kern Rim
- 申请人： Diane Boyd , Juan Cai , Kevin Chan , Patricia Mooney , Kern Rim
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
The present invention provides semiconductor structures and a method of fabricating such structures for application of MOSFET devices. The semiconductor structures are fabricated in such a way so that the layer structure in the regions of the wafer where n-MOSFETs are fabricated is different from the layer structure in regions of the wafers where p-MOSFETs are fabricated. The structures are fabricated by first forming a damaged region with a surface of a Si-containing substrate by ion implanting of a light atom such as He. A strained SiGe alloy is then formed on the Si-containing substrate containing the damaged region. An annealing step is then employed to cause substantial relaxation of the strained SiGe alloy via a defect initiated strain relaxation. Next, a strained semiconductor cap such as strained Si is formed on the relaxed SiGe alloy.
公开/授权文献
- US07273800B2 Hetero-integrated strained silicon n- and p-MOSFETs 公开/授权日：2007-09-25
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