发明申请
US20060091430A1 Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
有权
具有与衬底耦合的漏极的金属半导体场效应晶体管（MESFET）及其制造方法
- 专利标题： Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
- 专利标题（中）： 具有与衬底耦合的漏极的金属半导体场效应晶体管（MESFET）及其制造方法
-
申请号： US10977054申请日： 2004-10-29
-
公开(公告)号： US20060091430A1公开(公告)日： 2006-05-04
- 发明人: Saptharishi Sriram , Scott Allen
- 申请人： Saptharishi Sriram , Scott Allen
- 主分类号： H01L31/112
- IPC分类号： H01L31/112 ; H01L21/338
摘要：
The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a MESFET having a source region, a drain region and a gate contact. The gate contact is disposed between the source region and the drain region. The drain region is electrically coupled to the substrate through a contact via hole to the substrate. Related methods of fabricating MESFETs are also provided herein.
公开/授权文献
信息查询
IPC分类:
