发明申请
US20060091433A1 Semiconductor integrated circuit device and manufacturing method thereof
审中-公开
半导体集成电路器件及其制造方法
- 专利标题： Semiconductor integrated circuit device and manufacturing method thereof
- 专利标题（中）： 半导体集成电路器件及其制造方法
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申请号： US11260252申请日： 2005-10-28
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公开(公告)号： US20060091433A1公开(公告)日： 2006-05-04
- 发明人: Kazumi Nishinohara
- 申请人： Kazumi Nishinohara
- 优先权： JP2004-316686 20041029
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A semiconductor integrated circuit device includes a projected semiconductor layer formed at a part of the upper surface of a semiconductor substrate; a gate insulation film formed on a first side surface of the semiconductor layer; a gate electrode formed on the gate insulation film; a first insulation film formed on a second side surface of the semiconductor layer; and a source region and a drain region formed within the semiconductor layer to sandwich the gate electrode, wherein the first insulation film has a larger thickness than that of the gate insulation film.
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