- 专利标题： Dual function FinFET, finmemory and method of manufacture
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申请号： US10978951申请日： 2004-11-01
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公开(公告)号： US20060091450A1公开(公告)日： 2006-05-04
- 发明人: Huilong Zhu , Bruce Doris , Jochen Beintner
- 申请人： Huilong Zhu , Bruce Doris , Jochen Beintner
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L29/76
摘要：
A non-volatile storage cell in a Fin Field Effect Transistor (FinFET) and a method of forming an Integrated Circuit (IC) chip including the non-volatile storage cell. Each FET includes a control gate along one side of a semiconductor (e.g., silicon) fin, a floating gate along an opposite of the fin and a program gate alongside the floating gate. Control gate device thresholds are adjusted by adjusting charge on the floating gate.
公开/授权文献
- US07087952B2 Dual function FinFET, finmemory and method of manufacture 公开/授权日：2006-08-08
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