发明申请
- 专利标题： Semiconductor chip with post-passivation scheme formed over passivation layer
- 专利标题（中）： 具有钝化方案的半导体芯片形成在钝化层上
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申请号： US11262182申请日： 2005-10-28
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公开(公告)号： US20060091540A1公开(公告)日： 2006-05-04
- 发明人: Chiu-Ming Chou , Chien-Kang Chou , Ching-San Lin , Mou-Shiung Lin
- 申请人： Chiu-Ming Chou , Chien-Kang Chou , Ching-San Lin , Mou-Shiung Lin
- 专利权人： Megic Corporation
- 当前专利权人： Megic Corporation
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
The invention provides a semiconductor chip comprising a semiconductor substrate comprising a MOS device, an interconnecting structure over said semiconductor substrate, and a metal bump over said MOS device, wherein said metal bump has more than 50 percent by weight of gold and has a height of between 8 and 50 microns.
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