发明申请
- 专利标题： Multilayered barrier metal thin-films
- 专利标题（中）： 多层阻隔金属薄膜
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申请号： US11311546申请日： 2005-12-19
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公开(公告)号： US20060091554A1公开(公告)日： 2006-05-04
- 发明人: Wei Pan , Yoshi Ono , David Evans , Sheng Hsu
- 申请人： Wei Pan , Yoshi Ono , David Evans , Sheng Hsu
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A multi-layered barrier metal thin film is deposited on a substrate by atomic layer chemical vapor deposition (ALCVD). The multi-layer film may comprise several different layers of a single chemical species, or several layers each of distinct or alternating chemical species. In a preferred embodiment, the multi-layer barrier thin film comprises a Tantalum Nitride layer on a substrate, with a Titanium Nitride layer deposited thereon. The thickness of the entire multi-layer film may be approximately fifty Angstroms. The film has superior film characteristics, such as anti-diffusion capability, low resistivity, high density, and step coverage, when compared to films deposited by conventional chemical vapor deposition (CVD). The multi-layered barrier metal thin film of the present invention has improved adhesion characteristics and is particularly suited for metallization of a Copper film thereon.
公开/授权文献
- US08264081B2 Multilayered barrier metal thin-films 公开/授权日：2012-09-11
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