Provided are a high output semiconductor laser device that is capable of inhibiting changes in far-field horizontal (FFH) due to increased output thereof, and a process for preparing the same. The semiconductor laser device in accordance with the present invention comprises a first clad layer of a first conductivity type formed on a substrate; an active layer formed on the first clad layer; and a second clad layer of a second conductivity type formed on the active layer and including an upper region having a ridge structure, wherein the second clad layer has at least one high refractivity layer inserted into the ridge structure, the high refractivity layer having a higher refractive index than the second clad layer.