发明申请
- 专利标题： Method for the production of a short channel field-effect transistor
- 专利标题（中）： 用于制造短沟道场效应晶体管的方法
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申请号： US10520743申请日： 2003-06-21
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公开(公告)号： US20060094176A1公开(公告)日： 2006-05-04
- 发明人: Rodger Fehlhaber , Helmut Tews
- 申请人： Rodger Fehlhaber , Helmut Tews
- 优先权： DE10230696.6 20020708
- 国际申请： PCT/DE03/02072 WO 20030621
- 主分类号： H01L21/338
- IPC分类号： H01L21/338 ; H01L21/8234
摘要：
The invention relates to a method for fabricating a short channel field-effect transistor, comprising the steps of: forming a sublithographic gate sacrificial layer (3M), forming spacers (7S) at the side walls of the gate sacrificial layer (3M), removing the gate sacrificial layer (3M) to form a gate recess and forming a gate dielectric (10) and a control layer (11) in the gate recess. The result is a short channel FET with minimal fluctuations in the critical dimensions in a range below 100 nanometers.
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