- 专利标题： Semiconductor device and method of manufacturing the same
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申请号： US11311285申请日： 2005-12-20
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公开(公告)号： US20060094186A1公开(公告)日： 2006-05-04
- 发明人: Junichi Mitani
- 申请人： Junichi Mitani
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L21/20
摘要：
A manufacturing method of a semiconductor device comprises the steps of forming an etching stop insulating film (18) that covers at least side surfaces of a wiring (16) in a first region (2) and a first-stage conductive plug (15b) in a second region (3), then forming insulating films (20, 28) on the etching stop insulating film (18) and the wiring (16), then forming a hole (28) on a first-stage conductive plug (15b) by etching a part of the insulating films (20, 28) until the etching stop insulating film (18) is exposed, then exposing an upper surface of the first-stage conductive plug (15b) by etching selectively the etching stop insulating film (18) through the hole (28), and then forming a second-stage conductive plug (31a) in the hole (28).
公开/授权文献
- US07192862B2 Semiconductor device and method of manufacturing the same 公开/授权日：2007-03-20
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