发明申请
US20060094256A1 Using polydentate ligands for sealing pores in low-K dielectrics
有权
使用多齿配体密封低K电介质的孔隙
- 专利标题： Using polydentate ligands for sealing pores in low-K dielectrics
- 专利标题（中）： 使用多齿配体密封低K电介质的孔隙
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申请号： US10978540申请日： 2004-11-01
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公开(公告)号： US20060094256A1公开(公告)日： 2006-05-04
- 发明人: Frank Weber
- 申请人： Frank Weber
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
In preferred embodiments, a polydentate pore-sealing ligand is used to seal or repair pores damaged by plasma processing. The polydentate ligand includes bidentate ligands corresponding to the general formula X—CH2—(CH2)n—CH2—X or X—Si(CH3)2—(CH2)n—Si(CH3)2—X. The polydentate ligand also includes tridendate ligands corresponding to the general formula X—CH2—(CH2)m(CXH)(CH2)o—CH2—X or X—Si(CH3)2—(CH2)m(CXH)(CH2)o—Si(CH3)2—X. Alternative embodiments may include single or multiply branched polydentate ligands. Other embodiments include ligands that are cross-linked after attachment to the dielectric. Still other embodiments include a derivatization reaction wherein silanol groups formed by plasma damage are removed and favorable dielectric properties are restored.
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