发明申请
- 专利标题： Method for reducing defect concentration in crystals
- 专利标题（中）： 降低晶体缺陷浓度的方法
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申请号： US11300660申请日： 2005-12-12
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公开(公告)号： US20060096521A1公开(公告)日： 2006-05-11
- 发明人: Mark D'Evelyn , Thomas Anthony , Stephen Arthur , Lionel Levinson , John Lucek , Larry Rowland , Suresh Vagarali
- 申请人： Mark D'Evelyn , Thomas Anthony , Stephen Arthur , Lionel Levinson , John Lucek , Larry Rowland , Suresh Vagarali
- 主分类号： H01L21/322
- IPC分类号： H01L21/322
摘要：
A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
公开/授权文献
- US08216370B2 Method for reducing defect concentration in crystals 公开/授权日：2012-07-10
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