发明申请
- 专利标题： Fabrication of a low defect germanium film by direct wafer bonding
- 专利标题（中）： 通过直接晶片接合制造低缺陷锗膜
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申请号： US10985444申请日： 2004-11-10
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公开(公告)号： US20060099773A1公开(公告)日： 2006-05-11
- 发明人: Jer-Shen Maa , Jong-Jan Lee , Douglas Tweet , Sheng Hsu
- 申请人： Jer-Shen Maa , Jong-Jan Lee , Douglas Tweet , Sheng Hsu
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L21/30
- IPC分类号： H01L21/30
摘要：
A method of fabricating a low defect germanium thin film includes preparing a silicon wafer for germanium deposition; forming a germanium film using a two-step CVD process, annealing the germanium thin film using a multiple cycle process; implanting hydrogen ions; depositing and smoothing a layer of tetraethylorthosilicate oxide (TEOS); preparing a counter wafer; bonding the germanium thin film to a counter wafer to form a bonded structure; annealing the bonded structure at a temperature of at least 375° C. to facilitate splitting of the bonded wafer; splitting the bonded structure to expose the germanium thin film; removing any remaining silicon from the germanium thin film surface along with a portion of the germanium thin film defect zone; and incorporating the low-defect germanium thin film into the desired end-product device.
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