发明申请
US20060105476A1 Photoresist pattern, method of fabricating the same, and method of assuring the quality thereof
审中-公开
光刻胶图案，其制造方法以及确保其质量的方法
- 专利标题： Photoresist pattern, method of fabricating the same, and method of assuring the quality thereof
- 专利标题（中）： 光刻胶图案，其制造方法以及确保其质量的方法
-
申请号： US11319605申请日： 2005-12-29
-
公开(公告)号： US20060105476A1公开(公告)日： 2006-05-18
- 发明人: Yeon-Dong Choi , Kyoung-Yun Baek
- 申请人： Yeon-Dong Choi , Kyoung-Yun Baek
- 优先权： KR2004-1145 20040108
- 主分类号： H01L21/66
- IPC分类号： H01L21/66
摘要：
A photoresist pattern and a method of fabricating the same make it easy to quickly identify a particular portion of a photolithography process that is responsible for causing process defects. The method of fabricating the photoresist pattern includes forming main patterns having a predetermined critical dimension in device-forming regions of a semiconductor substrate, and forming a plurality of test patterns in scribe regions of the substrate. The scribe regions are defined alongside the device-forming regions and separate the device-forming regions from one another. The test patterns have shapes similar to that of the main patterns. Also, one of the test patterns has a critical dimensions similar to that of the main patterns, and other test patterns have respective critical dimensions that are different from the critical dimension of the main patterns.