公开(公告)号：US20060105476A1

公开(公告)日：2006-05-18

申请号：US11319605

申请日：2005-12-29

申请人： Yeon-Dong Choi ,  Kyoung-Yun Baek

发明人： Yeon-Dong Choi ,  Kyoung-Yun Baek

IPC分类号： H01L21/66

CPC分类号： H01L22/34 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/7065 ,  Y10S438/942

摘要： A photoresist pattern and a method of fabricating the same make it easy to quickly identify a particular portion of a photolithography process that is responsible for causing process defects. The method of fabricating the photoresist pattern includes forming main patterns having a predetermined critical dimension in device-forming regions of a semiconductor substrate, and forming a plurality of test patterns in scribe regions of the substrate. The scribe regions are defined alongside the device-forming regions and separate the device-forming regions from one another. The test patterns have shapes similar to that of the main patterns. Also, one of the test patterns has a critical dimensions similar to that of the main patterns, and other test patterns have respective critical dimensions that are different from the critical dimension of the main patterns.

摘要翻译： 光致抗蚀剂图案及其制造方法使得易于识别导致工艺缺陷的光刻工艺的特定部分变得容易。 制造光致抗蚀剂图案的方法包括在半导体衬底的器件形成区域中形成具有预定临界尺寸的主图案，并在衬底的划线区域中形成多个测试图案。 划线区域沿着器件形成区域定义并且将器件形成区域彼此分离。 测试图案具有与主图案类似的形状。 此外，其中一个测试图案具有与主图案相似的关键尺寸，其他测试图案具有与主图案的临界尺寸不同的各自的关键尺寸。

公开(公告)号：US07012031B2

公开(公告)日：2006-03-14

申请号：US11026100

申请日：2005-01-03

申请人： Yeon-Dong Choi ,  Kyoung-Yun Baek

发明人： Yeon-Dong Choi ,  Kyoung-Yun Baek

IPC分类号： H01L21/027

CPC分类号： H01L22/34 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/7065 ,  Y10S438/942

摘要： A photoresist pattern and a method of fabricating the same make it easy to quickly identify a particular portion of a photolithography process that is responsible for causing process defects. The method of fabricating the photoresist pattern includes forming main patterns having a predetermined critical dimension in device-forming regions of a semiconductor substrate, and forming a plurality of test patterns in scribe regions of the substrate. The scribe regions are defined alongside the device-forming regions and separate the device-forming regions from one another. The test patterns have shapes similar to that of the main patterns. Also, one of the test patterns has a critical dimensions similar to that of the main patterns, and other test patterns have respective critical dimensions that are different from the critical dimension of the main patterns.

公开(公告)号：US20050153466A1

公开(公告)日：2005-07-14

申请号：US11026100

申请日：2005-01-03

申请人： Yeon-Dong Choi ,  Kyoung-Yun Baek

发明人： Yeon-Dong Choi ,  Kyoung-Yun Baek

IPC分类号： H01L21/027 ,  G03F1/14 ,  G03F7/20 ,  H01L21/66 ,  H01L23/544

CPC分类号： H01L22/34 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/7065 ,  Y10S438/942

摘要： A photoresist pattern and a method of fabricating the same make it easy to quickly identify a particular portion of a photolithography process that is responsible for causing process defects. The method of fabricating the photoresist pattern includes forming main patterns having a predetermined critical dimension in device-forming regions of a semiconductor substrate, and forming a plurality of test patterns in scribe regions of the substrate. The scribe regions are defined alongside the device-forming regions and separate the device-forming regions from one another. The test patterns have shapes similar to that of the main patterns. Also, one of the test patterns has a critical dimensions similar to that of the main patterns, and other test patterns have respective critical dimensions that are different from the critical dimension of the main patterns.

摘要翻译： 光致抗蚀剂图案及其制造方法使得易于识别导致工艺缺陷的光刻工艺的特定部分变得容易。 制造光致抗蚀剂图案的方法包括在半导体衬底的器件形成区域中形成具有预定临界尺寸的主图案，并在衬底的划线区域中形成多个测试图案。 划线区域沿着器件形成区域定义并且将器件形成区域彼此分离。 测试图案具有与主图案类似的形状。 此外，其中一个测试图案具有与主图案相似的关键尺寸，其他测试图案具有与主图案的临界尺寸不同的各自的关键尺寸。