发明申请
- 专利标题： Schottky barrier diode and integrated circuit using the same
- 专利标题（中）： 肖特基势垒二极管和集成电路使用相同
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申请号： US11271833申请日： 2005-11-14
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公开(公告)号： US20060108605A1公开(公告)日： 2006-05-25
- 发明人: Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
- 申请人： Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 优先权： JP2004-338015 20041122
- 主分类号： H01L29/739
- IPC分类号： H01L29/739
摘要：
A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance than the first semiconductor layer and the second semiconductor layer. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer in a portion surrounded with the high-resistance region.
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