A circuit for indicating termination of scan of bits to be programmed in a nonvolatile semiconductor memory device includes a counting unit, a set bit number provision unit and a comparison unit. The counting unit counts the predetermined number of bits to be programmed, and provides a group of counting bit signals indicating the number of bits to be programmed. The set bit number provision unit provides a group of set bit signals indicating the number of set bits. The number of set bits can be externally controlled. The comparison unit compares the group of counting bit signals with the group of set bit signals and ultimately provides a scan termination signal used to control programming for the memory array. The logic level of the scan termination signal is changed when the number of bits to be programmed attains the number of set bits. Accordingly, a designer or user of a nonvolatile semiconductor memory device can adjust the number of bits to be simultaneously programmed, and the time required for a complete program operation can be shortened.