发明申请
- 专利标题： Semiconductor devices with composite etch stop layers and methods of fabrication thereof
- 专利标题（中）： 具有复合蚀刻停止层的半导体器件及其制造方法
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申请号： US10995923申请日： 2004-11-22
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公开(公告)号： US20060110912A1公开(公告)日： 2006-05-25
- 发明人: Yung-Cheng Lu , Tien-I Bao , Su-Hong Lin , Syun-Ming Jang
- 申请人： Yung-Cheng Lu , Tien-I Bao , Su-Hong Lin , Syun-Ming Jang
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
Semiconductor devices with composite etch stop layers and methods of fabrication thereof. An semiconductor device with a composite etch stop layer includes a substrate having a conductive member, a first etch stop layer on the substrate and the conductive member, a second etch stop layer and a dielectric layer sequentially over the second etch stop layer, having a conductive layer therein down through the dielectric layer, the second etch stop layer and the first etch stop layer to the conductive member.
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