发明申请
US20060113614A1 Nonvolatile memory device and method including resistor and transistor
有权
非易失存储器件和方法包括电阻和晶体管
- 专利标题: Nonvolatile memory device and method including resistor and transistor
- 专利标题(中): 非易失存储器件和方法包括电阻和晶体管
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申请号: US11267825申请日: 2005-11-07
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公开(公告)号: US20060113614A1公开(公告)日: 2006-06-01
- 发明人: In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , David Seo
- 申请人: In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , David Seo
- 优先权: KR10-2004-0090124 20041106
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
A nonvolatile memory device including one resistor and one transistor. The resistor may correspond to a resistance layer electrically connected to a first impurity region and a second impurity region of the transistor.