发明申请
- 专利标题: Edge removal of silicon-on-insulator transfer wafer
- 专利标题(中): 边缘去除绝缘体上硅转移晶片
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申请号: US10998289申请日: 2004-11-26
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公开(公告)号: US20060115986A1公开(公告)日: 2006-06-01
- 发明人: Raymond Donohoe , Krishna Vepa , Paul Miller , Ronald Rayandayan , Hong Wang
- 申请人: Raymond Donohoe , Krishna Vepa , Paul Miller , Ronald Rayandayan , Hong Wang
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/461
摘要:
A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.
公开/授权文献
- US07402520B2 Edge removal of silicon-on-insulator transfer wafer 公开/授权日:2008-07-22
信息查询
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