公开(公告)号：US07951718B2

公开(公告)日：2011-05-31

申请号：US12033727

申请日：2008-02-19

Applicant: Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang

Inventor： Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang

IPC: H01L21/302

CPC classification number: H01L21/76254 ,  H01L21/02032 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/76251 ,  Y10S438/974

Abstract: A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

Abstract translation: 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中，通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘，同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃，并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力，并且在周向唇缘的底部引导加压流体射流。

公开(公告)号：US20080138987A1

公开(公告)日：2008-06-12

申请号：US12033727

申请日：2008-02-19

Applicant: Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang

Inventor： Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang

IPC: H01L21/302

CPC classification number: H01L21/76254 ,  H01L21/02032 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/76251 ,  Y10S438/974

Abstract: A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

Abstract translation: 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中，通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘，同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃，并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力，并且在周向唇缘的底部引导加压流体射流。

公开(公告)号：US20090088049A1

公开(公告)日：2009-04-02

申请号：US11863050

申请日：2007-09-27

Applicant: Yashraj K. Bhatnagar ,  Ronald R. Rayandayan ,  Krishna Vepa

Inventor： Yashraj K. Bhatnagar ,  Ronald R. Rayandayan ,  Krishna Vepa

IPC: B24C1/08

CPC classification number: B24C3/04 ,  B24C1/086 ,  B24C3/322 ,  B24C11/00

Abstract: Embodiments of the invention describe a method for reclaiming a substrate by removing surface films with media blasting. A substrate is provided having a surface film. Media blasting is performed on the substrate to remove the surface film from the surface. In one embodiment media blasting removes a film from the substrate top surface. In another embodiment media blasting removes a film from the substrate top surface and side surface.

Abstract translation: 本发明的实施例描述了通过用介质爆破去除表面膜来回收基底的方法。 提供具有表面膜的基板。 在基板上进行介质喷砂以从表面去除表面膜。 在一个实施例中，介质喷射从基板顶表面去除膜。 在另一个实施例中，介质喷射从基板顶表面和侧表面去除膜。

公开(公告)号：US07402520B2

公开(公告)日：2008-07-22

申请号：US10998289

申请日：2004-11-26

Applicant: Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang

Inventor： Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang

IPC: H01L21/461

CPC classification number: H01L21/76254 ,  H01L21/02032 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/76251 ,  Y10S438/974

Abstract: A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

Abstract translation: 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中，通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘，同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃，并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力，并且在周向唇缘的底部引导加压流体射流。

公开(公告)号：US20060115986A1

公开(公告)日：2006-06-01

申请号：US10998289

申请日：2004-11-26

Applicant: Raymond Donohoe ,  Krishna Vepa ,  Paul Miller ,  Ronald Rayandayan ,  Hong Wang

Inventor： Raymond Donohoe ,  Krishna Vepa ,  Paul Miller ,  Ronald Rayandayan ,  Hong Wang

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/76254 ,  H01L21/02032 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/76251 ,  Y10S438/974

Abstract: A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

Abstract translation: 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中，通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘，同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃，并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力，并且在周向唇缘的底部引导加压流体射流。

公开(公告)号：US07775856B2

公开(公告)日：2010-08-17

申请号：US11863050

申请日：2007-09-27

Applicant: Yashraj K. Bhatnagar ,  Ronald R. Rayandayan ,  Krishna Vepa

Inventor： Yashraj K. Bhatnagar ,  Ronald R. Rayandayan ,  Krishna Vepa

IPC: B24B1/00

CPC classification number: B24C3/04 ,  B24C1/086 ,  B24C3/322 ,  B24C11/00

Abstract: Embodiments of the invention describe a method for reclaiming a substrate by removing surface films with media blasting. A substrate is provided having a surface film. Media blasting is performed on the substrate to remove the surface film from the surface. In one embodiment media blasting removes a film from the substrate top surface. In another embodiment media blasting removes a film from the substrate top surface and side surface.

Abstract translation: 本发明的实施例描述了通过用介质爆破去除表面膜来回收基底的方法。 提供具有表面膜的基板。 在基板上进行介质喷砂以从表面去除表面膜。 在一个实施例中，介质喷射从基板顶表面去除膜。 在另一个实施例中，介质喷射从基板顶表面和侧表面去除膜。

公开(公告)号：US20070190799A1

公开(公告)日：2007-08-16

申请号：US11737708

申请日：2007-04-19

Applicant: Hong Wang ,  Krishna Vepa ,  Paul Miller

Inventor： Hong Wang ,  Krishna Vepa ,  Paul Miller

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/31111 ,  H01L21/02079 ,  H01L21/31053 ,  Y10S438/911 ,  Y10S438/951

Abstract: A wafer comprising a low-k dielectric layer is refurbished for reuse. Initially, a removable layer is provided on the wafer. The low-k dielectric layer is formed over the removable layer. The overlying low-k dielectric layer is removed from the wafer by etching away the removable layer by at least partially immersing the wafer in an etching solution,. Thereafter, another low-k dielectric layer can be formed over another removable layer.

Abstract translation: 包括低k电介质层的晶片被翻新以重新使用。 最初，在晶片上设置可移除层。 低k电介质层形成在可移除层上。 通过至少部分地将晶片浸入蚀刻溶液中，通过蚀刻去除可去除层而从晶片上去除覆盖的低k电介质层。 此后，可以在另一可移除层上形成另一低k电介质层。

公开(公告)号：US20070190791A1

公开(公告)日：2007-08-16

申请号：US11737706

申请日：2007-04-19

Applicant: Hong Wang ,  Krishna Vepa ,  Paul Miller

Inventor： Hong Wang ,  Krishna Vepa ,  Paul Miller

IPC: H01L21/461 ,  H01L21/302

CPC classification number: H01L21/31111 ,  H01L21/02079 ,  H01L21/31053 ,  Y10S438/911 ,  Y10S438/951

Abstract: A low-k dielectric layer having a k value of less than about 3 and comprising silicon, oxygen and carbon, is removed from a wafer. In the method, the wafer is chemical mechanical polished by rotating the surface of the wafer against a polishing pad having a hardness of at least about 40 JIS A, while applying a polishing slurry between the wafer and the polishing pad.

Abstract translation: 具有k值小于约3并且包含硅，氧和碳的低k电介质层从晶片上去除。 在该方法中，通过使晶片的表面相对于具有至少约40 JIS A的硬度的抛光垫旋转晶片，同时在晶片和抛光垫之间施加抛光浆料。

公开(公告)号：US20070190790A1

公开(公告)日：2007-08-16

申请号：US11737704

申请日：2007-04-19

Applicant: Hong Wang ,  Krishna Vepa ,  Paul Miller

Inventor： Hong Wang ,  Krishna Vepa ,  Paul Miller

IPC: H01L21/461 ,  H01L21/302

CPC classification number: H01L21/31111 ,  H01L21/02079 ,  H01L21/31053 ,  Y10S438/911 ,  Y10S438/951

Abstract: A low-k dielectric layer is removed from a wafer to refresh the wafer. The low-k dielectric layer has a k value of less than about 3 and comprises silicon, oxygen and carbon. The method comprises fine grinding the low-k dielectric layer with a grinding surface comprising bonded particles of abrasive material having a size of from about 1 to about 6 micrometers. Thereafter, the wafer can be polished by chemical mechanical polishing.

Abstract translation: 从晶片去除低k电介质层以刷新晶片。 低k电介质层的k值小于约3，包括硅，氧和碳。 该方法包括用包含具有约1至约6微米尺寸的研磨材料的粘合颗粒的研磨表面来细磨低k电介质层。 此后，可以通过化学机械抛光抛光晶片。

公开(公告)号：US07208325B2

公开(公告)日：2007-04-24

申请号：US11037647

申请日：2005-01-18

Applicant: Hong Wang ,  Krishna Vepa ,  Paul V. Miller

Inventor： Hong Wang ,  Krishna Vepa ,  Paul V. Miller

IPC: H01L21/311

CPC classification number: H01L21/31111 ,  H01L21/02079 ,  H01L21/31053 ,  Y10S438/911 ,  Y10S438/951

Abstract: A low-k dielectric layer having a composition of silicon, oxygen and carbon is removed from a wafer. The low-k dielectric layer is removed by exposing a surface of the low-k dielectric layer to an oxygen-containing gas to oxidized the surface. The oxidized surface is immersed in an etching solution having HF and H2SO4 to etch the low-k dielectric layer. The etched surface is exposed to at least one of (i) an etching solution having H2SO4 and H2O2, and (ii) an RF or microwave energized oxygen-containing gas, to remove the low-k dielectric layer from the wafer.

Abstract translation: 从晶片去除具有硅，氧和碳组成的低k电介质层。 通过将低k电介质层的表面暴露于含氧气体以氧化表面来去除低k电介质层。 将氧化的表面浸入具有HF和H 2 SO 4 S 4的蚀刻溶液中以蚀刻低k电介质层。 蚀刻表面暴露于（i）具有H 2 SO 4 H 2和H 2 O 2 O 2的蚀刻溶液中的至少一种 和（ii）RF或微波激发的含氧气体，以从晶片去除低k电介质层。