发明申请
US20060115996A1 Method for enhancing FSG film stability 有权
提高FSG膜稳定性的方法

Method for enhancing FSG film stability
摘要:
A method for enhancing stability of a fluorinated silicon glass layer is disclosed. A fluorinated silicon glass layer provided on a substrate is subjected to a phosphorous-containing and hydrogen-containing gas such as phosphine (PH3), for example. The gas forms reactive hydrogen species which removes fluorine radicals and reactive phosphorous species which forms a moisture-gettering and ion-gettering phosphorious oxide film the layer.
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