发明申请
- 专利标题: Method for enhancing FSG film stability
- 专利标题(中): 提高FSG膜稳定性的方法
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申请号: US10999547申请日: 2004-11-30
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公开(公告)号: US20060115996A1公开(公告)日: 2006-06-01
- 发明人: Cheng-Yuan Tsai , You-Hua Chou , Chih-Lung Lin
- 申请人: Cheng-Yuan Tsai , You-Hua Chou , Chih-Lung Lin
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号: H01L21/31
- IPC分类号: H01L21/31 ; H01L21/302 ; H01L21/4763
摘要:
A method for enhancing stability of a fluorinated silicon glass layer is disclosed. A fluorinated silicon glass layer provided on a substrate is subjected to a phosphorous-containing and hydrogen-containing gas such as phosphine (PH3), for example. The gas forms reactive hydrogen species which removes fluorine radicals and reactive phosphorous species which forms a moisture-gettering and ion-gettering phosphorious oxide film the layer.
公开/授权文献
- US07226875B2 Method for enhancing FSG film stability 公开/授权日:2007-06-05