发明申请
- 专利标题： III-nitride material structures including silicon substrates
- 专利标题（中）： III族氮化物材料结构，包括硅衬底
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申请号： US11004628申请日： 2004-12-03
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公开(公告)号： US20060118819A1公开(公告)日： 2006-06-08
- 发明人: Allen Hanson , John Roberts , Edwin Piner , Pradeep Rajagopal
- 申请人： Allen Hanson , John Roberts , Edwin Piner , Pradeep Rajagopal
- 申请人地址： US NC Raleigh
- 专利权人： Nitronex Corporation
- 当前专利权人： Nitronex Corporation
- 当前专利权人地址： US NC Raleigh
- 主分类号： H01L31/109
- IPC分类号： H01L31/109
摘要：
III-nitride material structures including silicon substrates, as well as methods associated with the same, are described. Parasitic losses in the structures may be significantly reduced which is reflected in performance improvements. Devices (such as RF devices) formed of structures of the invention may have higher output power, power gain and efficiency, amongst other advantages.
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