公开(公告)号：US08748298B2

公开(公告)日：2014-06-10

申请号：US12023451

申请日：2008-01-31

Applicant: Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

Inventor： Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L29/7787 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02543 ,  H01L29/2003 ,  H01L29/432

Abstract: Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.

Abstract translation: 提供了包括氮化镓材料区域的半导体材料和与这种结构相关联的方法。 半导体结构包括在该结构内形成的应变吸收层。 应变吸收层可以形成在衬底（例如，硅衬底）和上覆层之间。 应变吸收层非常薄，具有非晶结构并且由氮化硅基材料形成可能是优选的。 应变吸收层可以减少在上层（例如，氮化物基材料层）中形成的失配位错的数量，其限制在其它覆盖层（例如，氮化镓材料区域）中形成其他类型的缺陷，其他 优点。 因此，应变吸收层的存在可以提高氮化镓材料区域的质量，这可以导致改进的器件性能。

公开(公告)号：US07994540B2

公开(公告)日：2011-08-09

申请号：US12508871

申请日：2009-07-24

Applicant: Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

Inventor： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC: H01L31/0328

CPC classification number: H01L29/812 ,  H01L29/2003 ,  H01L29/7787

Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Abstract translation: 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US07378684B2

公开(公告)日：2008-05-27

申请号：US10193823

申请日：2002-07-12

Applicant: Kevin J. Linthicum ,  Thomas Gehrke ,  Darren B. Thomson ,  Eric P. Carlson ,  Pradeep Rajagopal ,  Robert F. Davis

Inventor： Kevin J. Linthicum ,  Thomas Gehrke ,  Darren B. Thomson ,  Eric P. Carlson ,  Pradeep Rajagopal ,  Robert F. Davis

IPC: H01L29/20

CPC classification number: C30B25/02 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

Abstract: An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through the openings in the mask and laterally overgrows onto the mask on the tops of the posts, to thereby form a gallium nitride semiconductor layer. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. Microelectronic devices may be formed in the continuous gallium nitride semiconductor layer.

Abstract translation: 在碳化硅衬底上的下面的氮化镓层用掩模进行掩模，该掩模包括其中的开口阵列，并且通过开口阵列蚀刻下面的氮化镓层，以在下面的氮化镓层和沟槽之间形成沟槽。 所述柱各自包括侧壁和其上具有掩模的顶部。 柱的侧壁横向生长到沟槽中，从而形成氮化镓半导体层。 在这种侧向生长期间，面罩防止从柱的顶部成核和垂直生长。 因此，生长横向进入沟槽，从柱的侧壁悬挂。 柱的侧壁可以横向生长到沟槽中，直到横向生长的侧壁在沟槽中聚结，从而形成氮化镓半导体层。 可以继续从柱的侧壁的横向生长，使得氮化镓层垂直地通过掩模中的开口生长，并且横向过度地延伸到柱的顶部上的掩模上，从而形成氮化镓半导体层。 横向过度生长可以继续，直到生长的侧壁在掩模上聚结，从而形成连续的氮化镓半导体层。 微电子器件可以形成在连续的氮化镓半导体层中。

公开(公告)号：US20080116456A1

公开(公告)日：2008-05-22

申请号：US12024313

申请日：2008-02-01

Applicant: Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Kevin Linthicum

Inventor： Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Kevin Linthicum

IPC: H01L29/04

CPC classification number: H01L21/0254 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02513 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66462 ,  H01L29/7783

Abstract: Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in stresses may reduce defect formation and cracking in the gallium nitride material region, as well as reducing warpage of the overall structure. The gallium nitride material-based semiconductor structures may be used in a variety of applications such as transistors (e.g. FETs) Schottky diodes, light emitting diodes, laser diodes, SAW devices, and sensors, amongst others devices.

Abstract translation: 提供了氮化镓材料基半导体结构。 在一些实施例中，结构包括复合衬底，氮化镓材料区域形成在复合衬底上。 氮化镓材料结构可以包括另外的特征，例如应变吸收层和/或过渡层，其也促进有利的应力条件。 应力的降低可以减少氮化镓材料区域中的缺陷形成和开裂，同时​​减少整个结构的翘曲。 氮化镓材料基半导体结构可用于诸如晶体管（例如FET）肖特基二极管，发光二极管，激光二极管，SAW器件和传感器等各种应用中。

公开(公告)号：US07365374B2

公开(公告)日：2008-04-29

申请号：US11121793

申请日：2005-05-03

Applicant: Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Kevin J. Linthicum

Inventor： Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Kevin J. Linthicum

IPC: H01L31/0328

CPC classification number: H01L21/0254 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02513 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66462 ,  H01L29/7783

Abstract: Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in stresses may reduce defect formation and cracking in the gallium nitride material region, as well as reducing warpage of the overall structure. The gallium nitride material-based semiconductor structures may be used in a variety of applications such as transistors (e.g. FETs) Schottky diodes, light emitting diodes, laser diodes, SAW devices, and sensors, amongst others devices.

Abstract translation: 提供了氮化镓材料基半导体结构。 在一些实施例中，结构包括复合衬底，氮化镓材料区域形成在复合衬底上。 氮化镓材料结构可以包括另外的特征，例如应变吸收层和/或过渡层，其也促进有利的应力条件。 应力的降低可以减少氮化镓材料区域中的缺陷形成和开裂，同时​​减少整个结构的翘曲。 氮化镓材料基半导体结构可用于诸如晶体管（例如FET）肖特基二极管，发光二极管，激光二极管，SAW器件和传感器等各种应用中。

公开(公告)号：US07352015B2

公开(公告)日：2008-04-01

申请号：US11096505

申请日：2005-04-01

Applicant: Edwin Lanier Piner ,  John Claassen Roberts ,  Pradeep Rajagopal

Inventor： Edwin Lanier Piner ,  John Claassen Roberts ,  Pradeep Rajagopal

IPC: H01L31/00

CPC classification number: H01L29/7787 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02543 ,  H01L29/2003 ,  H01L29/432

Abstract: Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.

Abstract translation: 提供了包括氮化镓材料区域的半导体材料和与这种结构相关联的方法。 半导体结构包括在该结构内形成的应变吸收层。 应变吸收层可以形成在衬底（例如，硅衬底）和上覆层之间。 应变吸收层非常薄，具有非晶结构并且由氮化硅基材料形成可能是优选的。 应变吸收层可以减少在上层（例如，氮化物基材料层）中形成的失配位错的数量，其限制在其它覆盖层（例如，氮化镓材料区域）中形成其他类型的缺陷，其他 优点。 因此，应变吸收层的存在可以提高氮化镓材料区域的质量，这可以导致改进的器件性能。

公开(公告)号：US20060249748A1

公开(公告)日：2006-11-09

申请号：US11121793

申请日：2005-05-03

Applicant: Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Kevin Linthicum

Inventor： Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Kevin Linthicum

IPC: H01L29/732

CPC classification number: H01L21/0254 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02513 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66462 ,  H01L29/7783

Abstract: Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in stresses may reduce defect formation and cracking in the gallium nitride material region, as well as reducing warpage of the overall structure. The gallium nitride material-based semiconductor structures may be used in a variety of applications such as transistors (e.g. FETs) Schottky diodes, light emitting diodes, laser diodes, SAW devices, and sensors, amongst others devices.

Abstract translation: 提供了氮化镓材料基半导体结构。 在一些实施例中，结构包括复合衬底，氮化镓材料区域形成在复合衬底上。 氮化镓材料结构可以包括另外的特征，例如应变吸收层和/或过渡层，其也促进有利的应力条件。 应力的降低可以减少氮化镓材料区域中的缺陷形成和开裂，同时​​减少整个结构的翘曲。 氮化镓材料基半导体结构可用于诸如晶体管（例如FET）肖特基二极管，发光二极管，激光二极管，SAW器件和传感器等各种应用中。

公开(公告)号：US20050167775A1

公开(公告)日：2005-08-04

申请号：US10913297

申请日：2004-08-05

Applicant: Walter Nagy ,  Ricardo Borges ,  Jeffrey Brown ,  Apurva Chaudhari ,  James Cook ,  Allen Hanson ,  Jerry Johnson ,  Kevin Linthicum ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

Inventor： Walter Nagy ,  Ricardo Borges ,  Jeffrey Brown ,  Apurva Chaudhari ,  James Cook ,  Allen Hanson ,  Jerry Johnson ,  Kevin Linthicum ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

IPC: H01L29/15 ,  H01L29/20 ,  H01L29/778 ,  H01L29/812

CPC classification number: H01L29/812 ,  H01L29/2003 ,  H01L29/7787

Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Abstract translation: 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US10096701B2

公开(公告)日：2018-10-09

申请号：US12023480

申请日：2008-01-31

Applicant: Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

Inventor： Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

IPC: H01L29/778 ,  H01L21/02 ,  H01L29/20 ,  H01L29/43

Abstract: Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.

公开(公告)号：US20100295056A1

公开(公告)日：2010-11-25

申请号：US12748778

申请日：2010-03-29

Applicant: Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

Inventor： Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

IPC: H01L29/20 ,  H01L21/20

CPC classification number: C30B29/403 ,  C30B25/02 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02543

Abstract: Semiconductor structures including one, or more, III-nitride material regions (e.g., gallium nitride material region) and methods associated with such structures are provided. The III-nitride material region(s) advantageously have a low dislocation density and, in particular, a low screw dislocation density. In some embodiments, the presence of screw dislocations in the III-nitride material region(s) may be essentially eliminated. The presence of a strain-absorbing layer underlying the III-nitride material region(s) and/or processing conditions can contribute to achieving the low screw dislocation densities. In some embodiments, the III-nitride material region(s) having low dislocation densities include a gallium nitride material region which functions as the active region of the device. The low screw dislocation densities of the active device region (e.g., gallium nitride material region) can lead to improved properties (e.g., electrical and optical) by increasing electron transport, limiting non-radiative recombination, and increasing compositional/growth uniformity, amongst other effects.

Abstract translation: 提供包括一个或多个III族氮化物材料区域（例如，氮化镓材料区域）的半导体结构以及与这种结构相关联的方法。 III族氮化物材料区域有利地具有低位错密度，特别是低螺旋位错密度。 在一些实施方案中，可以基本上消除III族氮化物材料区域中螺旋位错的存在。 在III族氮化物材料区域和/或加工条件下存在应变吸收层有助于实现低螺旋位错密度。 在一些实施例中，具有低位错密度的III族氮化物材料区域包括用作该器件的有源区域的氮化镓材料区域。 活性器件区域（例如，氮化镓材料区域）的低螺旋位错密度可以通过增加电子传输，限制非辐射复合和增加组成/生长均匀性等而导致改进的性能（例如电和光学） 效果。