公开(公告)号：US10096701B2

公开(公告)日：2018-10-09

申请号：US12023480

申请日：2008-01-31

申请人： Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

发明人： Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

IPC分类号： H01L29/778 ,  H01L21/02 ,  H01L29/20 ,  H01L29/43

摘要： Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.

公开(公告)号：US20100295056A1

公开(公告)日：2010-11-25

申请号：US12748778

申请日：2010-03-29

申请人： Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

发明人： Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： C30B29/403 ,  C30B25/02 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02543

摘要： Semiconductor structures including one, or more, III-nitride material regions (e.g., gallium nitride material region) and methods associated with such structures are provided. The III-nitride material region(s) advantageously have a low dislocation density and, in particular, a low screw dislocation density. In some embodiments, the presence of screw dislocations in the III-nitride material region(s) may be essentially eliminated. The presence of a strain-absorbing layer underlying the III-nitride material region(s) and/or processing conditions can contribute to achieving the low screw dislocation densities. In some embodiments, the III-nitride material region(s) having low dislocation densities include a gallium nitride material region which functions as the active region of the device. The low screw dislocation densities of the active device region (e.g., gallium nitride material region) can lead to improved properties (e.g., electrical and optical) by increasing electron transport, limiting non-radiative recombination, and increasing compositional/growth uniformity, amongst other effects.

摘要翻译： 提供包括一个或多个III族氮化物材料区域（例如，氮化镓材料区域）的半导体结构以及与这种结构相关联的方法。 III族氮化物材料区域有利地具有低位错密度，特别是低螺旋位错密度。 在一些实施方案中，可以基本上消除III族氮化物材料区域中螺旋位错的存在。 在III族氮化物材料区域和/或加工条件下存在应变吸收层有助于实现低螺旋位错密度。 在一些实施例中，具有低位错密度的III族氮化物材料区域包括用作该器件的有源区域的氮化镓材料区域。 活性器件区域（例如，氮化镓材料区域）的低螺旋位错密度可以通过增加电子传输，限制非辐射复合和增加组成/生长均匀性等而导致改进的性能（例如电和光学） 效果。

公开(公告)号：US20080246058A1

公开(公告)日：2008-10-09

申请号：US12059182

申请日：2008-03-31

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H01L29/00

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US20080200013A1

公开(公告)日：2008-08-21

申请号：US12023451

申请日：2008-01-31

申请人： Edwin Lanier Piner ,  John Claassen Roberts ,  Pradeep Rajagopal

发明人： Edwin Lanier Piner ,  John Claassen Roberts ,  Pradeep Rajagopal

IPC分类号： H01L21/205

CPC分类号： H01L29/7787 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02543 ,  H01L29/2003 ,  H01L29/432

摘要： Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.

公开(公告)号：US07352016B2

公开(公告)日：2008-04-01

申请号：US11598551

申请日：2006-11-13

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry Wayne Johnson ,  Kevin J. Linthicum ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry Wayne Johnson ,  Kevin J. Linthicum ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan

IPC分类号： H01L31/00

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US20060118819A1

公开(公告)日：2006-06-08

申请号：US11004628

申请日：2004-12-03

申请人： Allen Hanson ,  John Roberts ,  Edwin Piner ,  Pradeep Rajagopal

发明人： Allen Hanson ,  John Roberts ,  Edwin Piner ,  Pradeep Rajagopal

IPC分类号： H01L31/109

CPC分类号： H01L29/267 ,  H01L29/2003 ,  H01L29/7787

摘要： III-nitride material structures including silicon substrates, as well as methods associated with the same, are described. Parasitic losses in the structures may be significantly reduced which is reflected in performance improvements. Devices (such as RF devices) formed of structures of the invention may have higher output power, power gain and efficiency, amongst other advantages.

摘要翻译： 描述了包括硅衬底的III族氮化物材料结构以及与其相关的方法。 结构中的寄生损失可能会显着降低，这反映在性能改进中。 由本发明的结构形成的器件（例如RF器件）可以具有更高的输出功率，功率增益和效率等优点。

公开(公告)号：US20060006500A1

公开(公告)日：2006-01-12

申请号：US10886506

申请日：2004-07-07

申请人： Edwin Piner ,  John Roberts ,  Pradeep Rajagopal

发明人： Edwin Piner ,  John Roberts ,  Pradeep Rajagopal

IPC分类号： H01L29/12

CPC分类号： C30B29/403 ,  C30B25/02 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02543

摘要： Semiconductor structures including one, or more, III-nitride material regions (e.g., gallium nitride material region) and methods associated with such structures are provided. The III-nitride material region(s) advantageously have a low dislocation density and, in particular, a low screw dislocation density. In some embodiments, the presence of screw dislocations in the III-nitride material region(s) may be essentially eliminated. The presence of a strain-absorbing layer underlying the III-nitride material region(s) and/or processing conditions can contribute to achieving the low screw dislocation densities. In some embodiments, the III-nitride material region(s) having low dislocation densities include a gallium nitride material region which functions as the active region of the device. The low screw dislocation densities of the active device region (e.g., gallium nitride material region) can lead to improved properties (e.g., electrical and optical) by increasing electron transport, limiting non-radiative recombination, and increasing compositional/growth uniformity, amongst other effects.

公开(公告)号：US20050145851A1

公开(公告)日：2005-07-07

申请号：US10879695

申请日：2004-06-28

申请人： Jerry Johnson ,  Ricardo Borges ,  Jeffrey Brown ,  James Cook ,  Allen Hanson ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

发明人： Jerry Johnson ,  Ricardo Borges ,  Jeffrey Brown ,  James Cook ,  Allen Hanson ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

IPC分类号： H01L21/285 ,  H01L21/329 ,  H01L21/335 ,  H01L29/20 ,  H01L29/872 ,  H01L29/15

CPC分类号： H01L29/7787 ,  H01L21/28587 ,  H01L21/7605 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/872

摘要： Gallium nitride material structures, including devices, and methods associated with the same are provided. In some embodiments, the structures include one or more isolation regions which electrically isolate adjacent devices. One aspect of the invention is the discovery that the isolation regions also can significantly reduce the leakage current of devices (e.g., transistors) made from the structures, particularly devices that also include a passivating layer formed on a surface of the gallium nitride material. Lower leakage currents can result in increased power densities and operating voltages, amongst other advantages.

摘要翻译： 提供了氮化镓材料结构，包括器件和与其相关的方法。 在一些实施例中，结构包括一个或多个隔离相邻器件的隔离区域。 本发明的一个方面是发现隔离区域还可以显着地减少由结构制成的器件（例如，晶体管）的泄漏电流，特别是还包括形成在氮化镓材料表面上的钝化层的器件。 较低的漏电流可以导致增加的功率密度和工作电压以及其它优点。

公开(公告)号：US06177688B1

公开(公告)日：2001-01-23

申请号：US09198784

申请日：1998-11-24

申请人： Kevin J. Linthicum ,  Thomas Gehrke ,  Darren B. Thomson ,  Eric P. Carlson ,  Pradeep Rajagopal ,  Robert F. Davis

发明人： Kevin J. Linthicum ,  Thomas Gehrke ,  Darren B. Thomson ,  Eric P. Carlson ,  Pradeep Rajagopal ,  Robert F. Davis

IPC分类号： H01L29267

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

摘要： An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through the openings in the mask and laterally overgrows onto the mask on the tops of the posts, to thereby form a gallium nitride semiconductor layer. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. Microelectronic devices may be formed in the continuous gallium nitride semiconductor layer.

摘要翻译： 在碳化硅衬底上的下面的氮化镓层用掩模进行掩模，该掩模包括其中的开口阵列，并且通过开口阵列蚀刻下面的氮化镓层，以在下面的氮化镓层和沟槽之间形成沟槽。 所述柱各自包括侧壁和其上具有掩模的顶部。 柱的侧壁横向生长到沟槽中，从而形成氮化镓半导体层。 在这种侧向生长期间，面罩防止从柱的顶部成核和垂直生长。 因此，生长横向进入沟槽，从柱的侧壁悬挂。 柱的侧壁可以横向生长到沟槽中，直到横向生长的侧壁在沟槽中聚结，从而形成氮化镓半导体层。 可以继续从柱的侧壁的横向生长，使得氮化镓层垂直地通过掩模中的开口生长，并且横向过度地延伸到柱的顶部上的掩模上，从而形成氮化镓半导体层。 横向过度生长可以继续，直到生长的侧壁在掩模上聚结，从而形成连续的氮化镓半导体层。 微电子器件可以形成在连续的氮化镓半导体层中。

公开(公告)号：US08748298B2

公开(公告)日：2014-06-10

申请号：US12023451

申请日：2008-01-31

申请人： Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

发明人： Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L29/7787 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02543 ,  H01L29/2003 ,  H01L29/432

摘要： Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.

摘要翻译： 提供了包括氮化镓材料区域的半导体材料和与这种结构相关联的方法。 半导体结构包括在该结构内形成的应变吸收层。 应变吸收层可以形成在衬底（例如，硅衬底）和上覆层之间。 应变吸收层非常薄，具有非晶结构并且由氮化硅基材料形成可能是优选的。 应变吸收层可以减少在上层（例如，氮化物基材料层）中形成的失配位错的数量，其限制在其它覆盖层（例如，氮化镓材料区域）中形成其他类型的缺陷，其他 优点。 因此，应变吸收层的存在可以提高氮化镓材料区域的质量，这可以导致改进的器件性能。