发明申请
- 专利标题: Dual damascene integration of ultra low dielectric constant porous materials
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申请号: US11341338申请日: 2006-01-26
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公开(公告)号: US20060118961A1公开(公告)日: 2006-06-08
- 发明人: Kaushik Kumar , Kelly Malone , Christy Tyberg
- 申请人: Kaushik Kumar , Kelly Malone , Christy Tyberg
- 专利权人: International Business Machines Corp.
- 当前专利权人: International Business Machines Corp.
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
A dual damascene interconnect structure having a patterned multilayer of spun-on dielectrics on a substrate is provided. The structure includes: a patterned multilayer of spun-on dielectrics on a substrate, including: a cap layer; a first non-porous via level low-k dielectric layer having thereon metal via conductors with a bottom portion and sidewalls; an etch stop layer; a first porous low-k line level dielectric layer having thereon metal line conductors with a bottom portion and sidewalls; a polish stop layer over the first porous low-k dielectric; a second thin non-porous low-k dielectric layer for coating and planarizing the line and via sidewalls; and a liner material between the metal via and line conductors and the dielectric layers. Also provided is a method of forming the dual damascene interconnect structure.
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