Low-Cost Deep Trench Decoupling Capacitor Device and Process of Manufacture

Invention Application

US20060124982A1 Low-Cost Deep Trench Decoupling Capacitor Device and Process of Manufacture 有权

Title translation: 低成本深沟槽去耦电容器件及其制造工艺

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Patent Title: Low-Cost Deep Trench Decoupling Capacitor Device and Process of Manufacture
Patent Title (中): 低成本深沟槽去耦电容器件及其制造工艺
Application No.: US10905094

Application Date: 2004-12-15
Publication No.: US20060124982A1

Publication Date: 2006-06-15
Inventor: Herbert Ho , John Barth , Ramachandra Divakaruni , Wayne Ellis , Johnathan Faltermeier , Brent Anderson , Subramanian Iyer , Deok-Kee Kim , Randy Mann , Paul Parries
Applicant: Herbert Ho , John Barth , Ramachandra Divakaruni , Wayne Ellis , Johnathan Faltermeier , Brent Anderson , Subramanian Iyer , Deok-Kee Kim , Randy Mann , Paul Parries
Applicant Address: US Armonk
Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
Current Assignee Address: US Armonk
Main IPC: H01L29/94
IPC: H01L29/94 ; H01L27/108

Low-Cost Deep Trench Decoupling Capacitor Device and Process of Manufacture

Abstract:

A novel trench-type decoupling capacitor structure and low-cost manufacturing process to create trench decoupling capacitors (decaps). In a unique aspect, the invention necessitates the addition of only a simplified trench to a base logic design.

Abstract(Chinese):

一种新颖的沟槽型去耦电容器结构和低成本制造工艺，以创建沟槽去耦电容器（decaps）。在一个独特的方面，本发明仅需要在基本逻辑设计中添加简化的沟槽。

Public/Granted literature

US07193262B2 Low-cost deep trench decoupling capacitor device and process of manufacture Public/Granted day:2007-03-20

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/86	..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/92	...有电位跃变势垒或表面势垒的电容器
H01L29/94	....金属—绝缘体—半导体，例如MOS