发明申请
- 专利标题： Field effect transistor and fabrication method
- 专利标题（中）： 场效应晶体管及制作方法
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申请号： US11295152申请日： 2005-12-06
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公开(公告)号： US20060125000A1公开(公告)日： 2006-06-15
- 发明人: Karlheinz Muller , Klaus Roschlau
- 申请人： Karlheinz Muller , Klaus Roschlau
- 优先权： DEDE10326523.6 20030612
- 主分类号： H01L21/8232
- IPC分类号： H01L21/8232 ; H01L29/76
摘要：
A field effect transistor (FET) and fabrication method are disclosed. The FET includes a drift region formed in a substrate. A trench adjoins the drift region and contains at least one control region and a connection region. An inversion channel region is isolated from the control region. A portion of the trench extends to the same depth as a second trench that insulates the FET from other components formed in the substrate. Insulating material is disposed between the trench below the control region and the control region. An insulating layer insulates the FET from the substrate. The trench and/or the connection region may extend into the insulating layer or may be isolated from the insulating layer via the drift region.
公开/授权文献
- US07767528B2 Field effect transistor and fabrication method 公开/授权日：2010-08-03
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