发明申请
US20060127068A1 Method and apparatus for silicon oxide deposition on large area substrates
审中-公开
在大面积衬底上沉积氧化硅的方法和装置
- 专利标题： Method and apparatus for silicon oxide deposition on large area substrates
- 专利标题（中）： 在大面积衬底上沉积氧化硅的方法和装置
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申请号： US11348595申请日： 2006-02-07
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公开(公告)号： US20060127068A1公开(公告)日： 2006-06-15
- 发明人: Sanjay Yadav , Quanyuan Shang , Wendell Blonigan
- 申请人： Sanjay Yadav , Quanyuan Shang , Wendell Blonigan
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 主分类号： A21B2/00
- IPC分类号： A21B2/00
摘要：
A method and apparatus for depositing a dielectric material at a rate of at least 3000 Angstroms per minute on a large area substrate that has a surface area of at least about 0.35 square meters is provided. In one embodiment, the dielectric material is silicon oxide. Also provided is a large area substrate having a layer of dielectric material deposited by a process yielding a deposition rate in excess of about 3000 Angstroms per minute and a processing chamber for fabricating the same.
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