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    Method and apparatus for silicon oxide deposition on large area substrates
    1.
    发明申请
    Method and apparatus for silicon oxide deposition on large area substrates 审中-公开
    在大面积衬底上沉积氧化硅的方法和装置

    公开(公告)号：US20060127068A1

    公开(公告)日：2006-06-15

    申请号：US11348595

    申请日：2006-02-07

    申请人： Sanjay Yadav ,  Quanyuan Shang ,  Wendell Blonigan

    发明人： Sanjay Yadav ,  Quanyuan Shang ,  Wendell Blonigan

    IPC分类号： A21B2/00

    CPC分类号： C23C16/402 ,  C23C16/4485

    摘要： A method and apparatus for depositing a dielectric material at a rate of at least 3000 Angstroms per minute on a large area substrate that has a surface area of at least about 0.35 square meters is provided. In one embodiment, the dielectric material is silicon oxide. Also provided is a large area substrate having a layer of dielectric material deposited by a process yielding a deposition rate in excess of about 3000 Angstroms per minute and a processing chamber for fabricating the same.

    摘要翻译： 提供了一种在具有至少约0.35平方米的表面积的大面积基板上以至少3000埃每分钟的速率沉积电介质材料的方法和装置。 在一个实施例中，电介质材料是氧化硅。 还提供了一种大面积基板，其具有通过产生超过约3000埃/分钟的沉积速率的工艺沉积的介电材料层和用于制造该沉积速率的处理室。

    Shadow frame with cross beam for semiconductor equipment
    3.
    发明授权
    Shadow frame with cross beam for semiconductor equipment 有权
    用于半导体设备的横梁的阴影框架

    公开(公告)号：US08002896B2

    公开(公告)日：2011-08-23

    申请号：US11248385

    申请日：2005-10-11

    申请人： Sakae Tanaka ,  Qunhua Wang ,  Sanjay Yadav ,  Quanyuan Shang ,  William R. Harshbarger

    发明人： Sakae Tanaka ,  Qunhua Wang ,  Sanjay Yadav ,  Quanyuan Shang ,  William R. Harshbarger

    IPC分类号： C23C16/04 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

    CPC分类号： C23C16/042 ,  C23C16/4585 ,  C23C16/4586

    摘要： A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.

    摘要翻译： 一种用于半导体制造设备的阴影框架和框架系统，包括具有四个边缘的矩形框架，所述边缘形成具有顶部表面和底部接合表面的内部唇部; 以及设置在所述框架的至少两个边缘之间的横梁，所述横梁具有顶表面和底部接合表面，所述横梁的接合表面被配置为与所述唇缘的接合表面齐平; 其中所述接合表面中的一个或多个构造成覆盖设置在所述框架下方的载体上的金属互连结合区域。 阴影框架在用于制造有源矩阵液晶显示器（AMLCD）和太阳能电池的等离子体增强化学气相沉积（PECVD）应用中特别有用。

    Shadow frame with cross beam for semiconductor equipment
    4.
    发明授权
    Shadow frame with cross beam for semiconductor equipment 有权
    用于半导体设备的横梁的阴影框架

    公开(公告)号：US06960263B2

    公开(公告)日：2005-11-01

    申请号：US10136249

    申请日：2002-04-25

    申请人： Sakae Tanaka ,  Qunhua Wang ,  Sanjay Yadav ,  Quanyuan Shang ,  William R. Harshbarger

    发明人： Sakae Tanaka ,  Qunhua Wang ,  Sanjay Yadav ,  Quanyuan Shang ,  William R. Harshbarger

    IPC分类号： C23C16/04 ,  C23C16/458 ,  H01L21/205 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： C23C16/042 ,  C23C16/4585 ,  C23C16/4586

    摘要： A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.

    摘要翻译： 一种用于半导体制造设备的阴影框架和框架系统，包括具有四个边缘的矩形框架，所述边缘形成具有顶部表面和底部接合表面的内部唇部; 以及设置在所述框架的至少两个边缘之间的横梁，所述横梁具有顶表面和底部接合表面，所述横梁的接合表面被配置为与所述唇缘的接合表面齐平; 其中所述接合表面中的一个或多个构造成覆盖设置在所述框架下方的载体上的金属互连结合区域。 阴影框架在用于制造有源矩阵液晶显示器（AMLCD）和太阳能电池的等离子体增强化学气相沉积（PECVD）应用中特别有用。

    On-site cleaning gas generation for process chamber cleaning
    5.
    发明授权
    On-site cleaning gas generation for process chamber cleaning 失效
    现场清洁气体生成用于处理室清洁

    公开(公告)号：US06843258B2

    公开(公告)日：2005-01-18

    申请号：US09741529

    申请日：2000-12-19

    申请人： Quanyuan Shang ,  Sanjay Yadav ,  William R. Harshbarger ,  Kam S. Law

    发明人： Quanyuan Shang ,  Sanjay Yadav ,  William R. Harshbarger ,  Kam S. Law

    IPC分类号： C23C16/44 ,  B08B9/00

    CPC分类号： H01J37/32862 ,  C23C16/4405 ,  Y10S134/902 ,  Y10S438/905

    摘要： Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.

    摘要翻译： 本文提供了一种用于清洁用于半导体和/或平板显示器制造的处理室的方法。 该方法包括以下步骤：将非清洁进料气体转化为远程位置的清洁气体，然后将清洁气体输送到处理室进行清洁。 这种方法还可以包括在将气体输送到室之前激活室外的清洁气体的步骤。 还提供了一种通过冷冻冷凝从清洁气体中清除未清洁进料气体的方法。

    Susceptor shaft vacuum pumping
    9.
    发明授权
    Susceptor shaft vacuum pumping 有权
    受体轴抽真空

    公开(公告)号：US06896929B2

    公开(公告)日：2005-05-24

    申请号：US09922352

    申请日：2001-08-03

    申请人： Sanjay Yadav ,  Quanyuan Shang ,  Ernst Keller ,  Wei Chang

    发明人： Sanjay Yadav ,  Quanyuan Shang ,  Ernst Keller ,  Wei Chang

    IPC分类号： C23C16/458 ,  H01L21/205 ,  H01L21/683 ,  C23C16/00

    CPC分类号： H01L21/6838

    摘要： Provided herein is a method of improving the planarity of a support plate of a susceptor for use during deposition of a film of material onto a substrate comprising the steps of reducing pressure in a hollow core of a shaft to a level below atmospheric pressure; and reducing a pressure in the deposition chamber to a level required for the deposition of the film of material onto the substrate, where the pressure in the hollow core of the shaft acts upon a lower surface of the support plate connected to the shaft and interfacing with the hollow core of the shaft and the pressure in the deposition chamber acts upon an upper surface of the support plate adapted to support the substrate thereby improving planarity. Also provided are a susceptor and a method of depositing a film onto a substrate affixed to the susceptor of the present invention.

    摘要翻译： 本文提供了一种提高用于将材料膜沉积到基材上的基座的支撑板的平面度的方法，包括以下步骤：将轴的空心芯中的压力降低到低于大气压的水平; 并且将沉积室中的压力降低到将材料膜沉积到衬底上所需的水平，其中轴的中空芯中的压力作用在连接到轴的支撑板的下表面上并且与 轴的中空芯和沉积室中的压力作用在支撑板的上表面上，以适应于支撑基板，从而改善平面度。 还提供了一种感受器和将薄膜沉积在固定到本发明的基座上的基底上的方法。

    Water-barrier performance of an encapsulating film
    10.
    发明授权
    Water-barrier performance of an encapsulating film 有权
    封装膜的防水性能

    公开(公告)号：US07183197B2

    公开(公告)日：2007-02-27

    申请号：US11133130

    申请日：2005-05-18

    申请人： Tae Kyung Won ,  Sanjay Yadav

    发明人： Tae Kyung Won ,  Sanjay Yadav

    IPC分类号： H01L21/4763

    CPC分类号： C23C16/345 ,  C23C8/36

    摘要： A method and apparatus for depositing a material layer onto a substrate is described. The method includes delivering a mixture of precursors for the material layer into a process chamber and depositing the material layer on the substrate at low temperature. The material layer can be used as an encapsulating layer for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. In one aspect, the encapsulating layer includes one or more material layers (multilayer) having one or more barrier layer materials and one or more low-dielectric constant materials. The encapsulating layer thus deposited provides reduced surface roughness, improved water-barrier performance, reduce thermal stress, good step coverage, and can be applied to many substrate types and many substrate sizes. Accordingly, the encapsulating layer thus deposited provides good device lifetime for various display devices, such as OLED devices. In another aspect, a method of depositing an amorphous carbon material on a substrate at low temperature is provided. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.

    摘要翻译： 描述了将材料层沉积到基底上的方法和装置。 该方法包括将用于材料层的前体的混合物输送到处理室中，并在低温下将材料层沉积在基底上。 材料层可以用作需要低温沉积工艺的各种显示应用的封装层，这是由于使用的下层材料的热不稳定性。 在一个方面，封装层包括具有一个或多个势垒层材料和一种或多种低介电常数材料的一种或多种材料层（多层）。 由此沉积的封装层提供降低的表面粗糙度，改善的防水性能，降低热应力，良好的阶梯覆盖，并且可以应用于许多基板类型和许多基板尺寸。 因此，如此沉积的封装层为诸如OLED器件的各种显示器件提供了良好的器件寿命。 另一方面，提供了一种在低温下在基板上沉积无定形碳材料的方法。 无定形碳材料可用于降低热应力并防止沉积的薄膜从基底上剥离。