- 专利标题: Low capacitance two-terminal barrier controlled TVS diodes
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申请号: US11020507申请日: 2004-12-22
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公开(公告)号: US20060131605A1公开(公告)日: 2006-06-22
- 发明人: Adrian Cogan , Jin Qiu , Richard Blanchard
- 申请人: Adrian Cogan , Jin Qiu , Richard Blanchard
- 主分类号: H01L29/74
- IPC分类号: H01L29/74 ; H01L23/62
摘要:
A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and the cathode electrode, and may be arranged such that the anode region provides conductivity modulation by injecting minority carriers into the channel region during conduction of the semiconductor structure. In presently preferred form the majority carriers are electrons and the minority carriers are holes. Fabrication methods are described.
公开/授权文献
- US07244970B2 Low capacitance two-terminal barrier controlled TVS diodes 公开/授权日:2007-07-17
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