- 专利标题: P-type OFET with fluorinated channels
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申请号: US11337897申请日: 2006-01-23
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公开(公告)号: US20060134824A1公开(公告)日: 2006-06-22
- 发明人: Zhenan Bao , Evert-Jan Borkent
- 申请人: Zhenan Bao , Evert-Jan Borkent
- 申请人地址: US NJ Murray Hill 07974-0636
- 专利权人: Lucent Technologies Inc.
- 当前专利权人: Lucent Technologies Inc.
- 当前专利权人地址: US NJ Murray Hill 07974-0636
- 主分类号: H01L51/40
- IPC分类号: H01L51/40
摘要:
The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surface. The semiconductor layer comprises organic semiconductor molecules. Each of the organic semiconductor molecules includes a core having conjugated pi bonds, a fluorinated alkyl group, and an alkyl spacer group having a chain of two or more carbon atoms. One end of the chain is bonded to the fluorinated alkyl group and another end of the chain is bonded to the core. Substituents coupled to the carbon atoms have an electronegativity of less than about 4.
公开/授权文献
- US07160754B2 P-type OFET with fluorinated channels 公开/授权日:2007-01-09
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