发明申请
- 专利标题： Power semiconductor module
- 专利标题（中）： 功率半导体模块
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申请号： US11304703申请日： 2005-12-16
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公开(公告)号： US20060138452A1公开(公告)日： 2006-06-29
- 发明人: Wolfgang Knapp , Stefanie Apeldoorn
- 申请人： Wolfgang Knapp , Stefanie Apeldoorn
- 申请人地址： CH Zurich
- 专利权人： ABB Research Ltd
- 当前专利权人： ABB Research Ltd
- 当前专利权人地址： CH Zurich
- 优先权： EP04405776.8 20041216
- 主分类号： H01L31/111
- IPC分类号： H01L31/111
摘要：
A power semiconductor module (1) with a housing (2) and at least one semiconductor chip (3, 3′) located in it is devised. At least one semiconductor chip (3, 3′) has a first main electrode side (31) and a second main electrode side (32) opposite the first main electrode side, the first main electrode side (31) making thermal and electrical contact with the first base plate (4, 4′). The first cooling device (6) makes thermal and electrical contact with the side of the first base plate (41) facing away from the first main electrode side. The second main electrode side (32) makes thermal and electrical contact with a second base plate (5, 5′). A second cooling device (7) makes thermal contact with the side of the second base plate (51) facing away from the second main electrode side. The heat sink (65) of the first cooling device is supported against the housing (2).
公开/授权文献
- US07696532B2 Power semiconductor module 公开/授权日：2010-04-13
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