发明申请
US20060138459A1 Semiconductor device, manufacturing method of the same and electronic device
审中-公开
半导体器件及其制造方法及电子器件
- 专利标题： Semiconductor device, manufacturing method of the same and electronic device
- 专利标题（中）： 半导体器件及其制造方法及电子器件
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申请号： US11316989申请日： 2005-12-27
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公开(公告)号： US20060138459A1公开(公告)日： 2006-06-29
- 发明人: Atsushi Kurokawa , Isao Ohbu , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura
- 申请人： Atsushi Kurokawa , Isao Ohbu , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura
- 优先权： JP2004-375632 20041227
- 主分类号： H01L31/109
- IPC分类号： H01L31/109
摘要：
Provided is a semiconductor device equipped with HBTs capable of satisfying both thermal stability and reliability and having improved electrostatic breakdown voltage. The HBT according to the present invention is obtained by successively forming, over the main surface of a substrate made of a compound semiconductor, a sub-collector layer, a collector layer, a base layer, an emitter layer, a collector electrode electrically connected to the collector layer, a base electrode electrically connected to the base layer, an emitter mesa layer formed over the emitter layer and electrically connected to the emitter layer, and an emitter electrode electrically connected to the emitter mesa layer. The emitter mesa layer has a semiconductor layer made of an n type GaAs layer, a high concentration semiconductor layer made of an n+ type GaAs layer over the semiconductor layer and a ballast resistor layer made of an n type InGaAs layer over the high concentration semiconductor layer.
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